Significantly improved wear properties are described for glassy carbon following implantation with 2 MeV helium and 50 keV nitrogen to doses in the range 1015–1017 ions cm−2. Implanted material is up to 100 times more wear resistant to diamond abrasion than unimplanted material. Enhanced wear resistance is available at the surface with nitrogen but lies below the surface with helium, reflecting the difference in modified depth associated with implant energy and ion mass. Unusually for ion implantation, dose related surface compaction is observed for both nitrogen and helium. Changes in microstructure during implantation with particular regard to collision processes and amorphisation of the graphitic fraction of glassy carbon are discussed.

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphide. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen Impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by x-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on the III–V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Poly- and single crystalline copper was implanted with aluminium and nitrogen at doses ranging from 1016 to 5 × 1017 at/cm2 and energies of 170 keV. The corrosion resistance of the implanted surfaces was tested by exposure to an H25-containing atmosphere. The amount of copper sulphide formed was measured by chrono potentiometric reduction. The amount of corrosion products was markedly reduced (up to a factor 50) by high dose implantations of aluminium. The microstructure of the implanted copper was examined by Transmission Electron Microscopy of cross-sectioned specimens. A deep damage layer far exceeding the ion range was observed. XTEM-pictures of aluminium implanted copper single crystals of various orientations suggest a channeling mechanism for this deep damage layer. In situ annealing of the specimens in the TEM showed that most of the implantation damage is removed at 600°C except for an array of dislocations at the end of the damage range.

A surface layer of Fe50Ti50 on AISI 304 stainless steel was produced by ion beam mixing a Fe-Ti multilayer structure. Subsequently, the layer was implanted with C, N, or C+N ions. The dry sliding properties of these surfaces were tested using a ceramic pin as a rider in pin-on-disc measurements. Implantations produced significant improvements in the surface friction and wear properties. Samples implanted with C or C+N showed good tribological properties even under conditions where the Herzian peak pressure exceeded the yield strength of the substrate. As a result of different treatments the appearance of the wear tracks examined with a scanning electron microscope was also changed.

Nitrogen implantations in pure iron and various stE-els are investigated using nuclear reaction analysis, Conversion Electron M6ssbauer Spectroscopy and Grazing angle X-ray Diffraction. The present work sums up all the significant results although it does not constitue a systematic study. It describes the influence of the chemical composition and the structure effect of the matrix as well as those of the implantation time. The N-martensite, ε-nitride and ε-carbonitride phases are principally identified. The fraction of iron bound with nitrogen is evaluated in the different steels. The strong influence of the small chromium amounts inside the matrix upon the nitride formation is underlined. A preferential orientation of these phases is shown. SIMS experiments are presented in particular to determine the carbon distribution in the first surface layers.

In order to achieve low cost rapid surface modification of mechanical components a broad beam (10 cm. dia.), ultrahigh current density (up to 1500 μA/cm2) ion implanter has been developed at Colorado State University. The characteristics of ultrahigh current density ion implantation are compared to those of conventional ion implantation and the relative advantages of the ultrahigh current density implantation are identified. The temperature rise that typical implanted surfaces experience during implantation at various current densities are measured and compared with numerical heat transfer calculations. It is shown that even though the temperature rise can be high at ultrahigh current density implantation conditions, the times at temperature are sufficiently short (typically, 11 sec.) so that no significant tempering, annealing or other diffusion based transformations in the bulk material (i.e. beneath the implanted layer) are induced. The microstructure and hardness beneath the implanted layer are compared before and after ultrahigh current density ion implantation. The results on 1018 martensitic steel, 440C martensitic steel, 52100 martensitic steel, 304 stainless steel, Ti-6A1–4V and 2024-T3 aluminum are presented. The substantial advantage of much deeper (fourfold) ion penetration observed with ultrahigh current density implantation is identified. It is suggested that this increased depth of penetration is due to the phenomenon of radiation enhanced diffusion.

An investigation of the ion beam mixing of Mo and Ta layers with 304 stainless steel and the potentiodynamic polarization behavior of the modified surfaces are described.

Alternating thin layers (<100Å) of stainless steel (304) and either Mo or Ta were deposited by electron beam evaporation. Ion mixing was performed with 2 MeV Ni+ at a fluence of 5 × 1016cm−2. Examination of the mixed surfaces with TEN revealed characteristics of the amorphous phase and in some cases being embedded with crystalline regions for both Mo and Ta mixed stainless steel surfaces. The amorphous surfaces were tested for their corrosion behavior in 1M H2SO4 and O.1M NaCl solutions by the potentiodynamic polarization method. Significantly improved corrosion behavior were obtained for modified surfaces compared to unmodified stainless steel.

Adhesion between Cu and Teflon has been greatly enhanced by a presputtering treatment of the Teflon prior to the deposition of Cu. Without such a treatment, the Cu-Teflon adhesion is weak, with a peel strength less than 1 gram/mm, and the Cu films can be easily peeled off using scotch tape. With the presputtering treatment, the adhesion rapidly increases, and reaches 50 grams/mm after 30 sec of sputtering. All the sputtered samples show strong adhesion, and the Cu films can only be scratched off forcefully using sharp tools. The presputtering treatment has changed the surface morphology of the Teflon and the deposited Cu layers, and also changes the chemical bonding between Cu and Teflon. The results are discussed to understand the mechanisms involved for the enhanced adhesion observed.

By ion bombardment of yttrium and europium hot-pressed oxide targets, their amorphous polycrystalline and monocrystalline films have been obtained on the monocrystalline substrates of (111) molybdenum and (1012). (0001) sapphire. The growth direction of the monocrystalline films with respect to the material and orientation of the substrates corresponds to (011). (211) planes for Y2O3 and (011) Eu2O3.

It is determined that the structural imperfection of the grown films does not influence either the square root dependence of the absorption coefficient on decreasing photon energy, the value of their specific electric resistance, or the character of its temperature dependence. The values of the forbidden zone width as well as the energy of the investigated oxide conductivity activation are calculated on the basis of experimental results.

It is shown that the light absorption in the Y2O3, Eu2O3 films is mediated by the direct allowed transitions of electrons from the valence band to the conduction band whose extrema are at the same point in k-space. The conductivity of the metal-dielectric-metal structure based on a monocrystalline film of yttrium oxide is mediated by the Frenkel-Poole mechanism.

Ultraviolet reflectivity, surface chemistry and electrical measurements are reported for Ar+-ion bombarded (100) GaAs surfaces, with ion energies from 0.5 to 4 keV. Changes in reflectivity spectra, surface stoichiometry and Schottky diode parameters are reported as functions of ion energy.

Ion implantation is shown to retard surface slip and thereby induce improvements in wear and fatigue resistance of metals. A simple test is described which can be used to study the effects of ion implantation in retarding motion of dislocations in the near-surface regions of metals. In this test, regions of annealed and etched surfaces of metals are masked and implanted with ions. The specimens are then deformed until significant plastic deformation is introduced and the slip-lines are observed under the microscope. Evidence of improved resistance to slip-line formation in nitrogen ion implanted surface regions is presented for copper, α-iron and 303 stainless steel. The test is shown to be a useful tool for comparing the effects of ion implantation conditions on surface slip retardation, since adjacent regions of the surface can be implanted to different conditions and the resistance to slip line formation in the different regions can be compared. For example, the resistance to slip line formation in 303 stainless steel was found to be greater in regions that were implanted at ultrahigh current densities (1500 μA/cm2) than in regions implanted at lower current densities (100 μA/cm2) to the same dose and at the same ion energy.

Optical reflectometry has been used to describe the morphology of buried layers by high dose oxygen ion implantation into silicon. Previous work has demonstrated that the layer depth, thickness, and shape of surrounding regions with a graded concentration of oxygen can be successfully modeled when compared to SIMS and XTEM. A selection of nomographs for analyzing spectra resulting from conventional implant conditions as a function of dose and screen oxide thickness are presented.

Single crystal <100> Silicon wafers implanted by 1×1016/cm2 boron ions at 30, 80, or 130 KeV are studied. The through thickness strain distribution in the wafer is found to reverse from tension in the as-implanted condition to compression after annealing for 20 minutes at 900°C. The 30 KeV implant generates a partially amorphized region under the wafer surface. Boron diffuses out of this region and accumulates at greater depth during annealing. Higher energy implants do not generate such an amorphous region and many long rod-like defects develop under a band of dislocation loops during annealing. Enhanced boron diffusion was observed at the tail of the boron profile at all three energies.

Rutherford Backscattering Spectrometry (RBS) using MeV ions is capable of routinely measuring absolute atomic areal densities to an accuracy of about 3% and relative areal densities to a fraction of 1% if the elastic scattering peaks from different elements do not overlap. The accuracy of areal density measurements can be seriously reduced in cases where the sample thickness is large enough to cause overlapping peaks. We report here an investigation of the use of standard computer fitting techniques to analyze overlapping peaks in elastic scattering spectra and its effect on the accuracy of the final results of an RBS analysis.

(100) silicon amorphized by antimony ion implantation was epitaxially regrown by either furnace or pulsed laser annealing. Rocking curves were measured on a double-crystal X-ray diffractometer, and compared with calculations based on a one-dimensional strain profile. For laser annealed samples the strain profile followed that of the antimony (redistributed by surface melting), with a proportionality constant given by the Pauling covalent radius ratio. For furnace annealed samples however the strain was found to be deeper, but of smaller peak magnitude, than that expected from the antimony distribution. This is attributed to formation and movement of defects acting to relax lattice strain. Other X-ray strain measurements on epitaxial silicon containing other dòpants are briefly reviewed.