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Preparation of Thin Films of some Rem Oxides and study of Their Structure, Optical, and electrical properties

Published online by Cambridge University Press:  25 February 2011

G. G. Gvelesiani
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR Tbilisi, U.S.S.R.
M. A. Katsitadze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR Tbilisi, U.S.S.R.
A. F. Andreeva
Affiliation:
Institute for Problems of Materials Science Academy of Sciences of the Ukrainian SSR, Kiev, U.S.S.R.
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Abstract

By ion bombardment of yttrium and europium hot-pressed oxide targets, their amorphous polycrystalline and monocrystalline films have been obtained on the monocrystalline substrates of (111) molybdenum and (1012). (0001) sapphire. The growth direction of the monocrystalline films with respect to the material and orientation of the substrates corresponds to (011). (211) planes for Y2O3 and (011) Eu2O3.

It is determined that the structural imperfection of the grown films does not influence either the square root dependence of the absorption coefficient on decreasing photon energy, the value of their specific electric resistance, or the character of its temperature dependence. The values of the forbidden zone width as well as the energy of the investigated oxide conductivity activation are calculated on the basis of experimental results.

It is shown that the light absorption in the Y2O3, Eu2O3 films is mediated by the direct allowed transitions of electrons from the valence band to the conduction band whose extrema are at the same point in k-space. The conductivity of the metal-dielectric-metal structure based on a monocrystalline film of yttrium oxide is mediated by the Frenkel-Poole mechanism.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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