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Boron Nitride: Composition, Optical Properties, and Mechanical Behavior

Published online by Cambridge University Press:  25 February 2011

John J. Pouch ,
Samuel A. Alterovitz ,
Kazuhisa Miyoshi  and
Joseph O. Warner
John J. Pouch
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Samuel A. Alterovitz
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Kazuhisa Miyoshi
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Joseph O. Warner
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
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Abstract

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphide. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen Impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by x-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on the III–V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 323
Copyright
Copyright © Materials Research Society 1987

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References

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