Article contents
Optical, Chemical and Electrical Characterization of Ion-Etched Gallium Arsenide Surfaces
Published online by Cambridge University Press: 25 February 2011
Abstract
Ultraviolet reflectivity, surface chemistry and electrical measurements are reported for Ar+-ion bombarded (100) GaAs surfaces, with ion energies from 0.5 to 4 keV. Changes in reflectivity spectra, surface stoichiometry and Schottky diode parameters are reported as functions of ion energy.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1987
References
REFERENCES
- 3
- Cited by