Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:43:26.793Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Presputtering on the Adhesion of Cu to Teflon

Published online by Cambridge University Press:  25 February 2011

Chin-An Chang ,
K. C. Lin ,
J. E. E. Baglin ,
G. Coleman  and
J. Park
Chin-An Chang
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
K. C. Lin
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
J. E. E. Baglin
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
G. Coleman
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
J. Park
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
Get access

Abstract

Adhesion between Cu and Teflon has been greatly enhanced by a presputtering treatment of the Teflon prior to the deposition of Cu. Without such a treatment, the Cu-Teflon adhesion is weak, with a peel strength less than 1 gram/mm, and the Cu films can be easily peeled off using scotch tape. With the presputtering treatment, the adhesion rapidly increases, and reaches 50 grams/mm after 30 sec of sputtering. All the sputtered samples show strong adhesion, and the Cu films can only be scratched off forcefully using sharp tools. The presputtering treatment has changed the surface morphology of the Teflon and the deposited Cu layers, and also changes the chemical bonding between Cu and Teflon. The results are discussed to understand the mechanisms involved for the enhanced adhesion observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 369
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chou, N. J. and Rang, C. H., J. Vac. Sci. Technol. A 2, 751 (1984).Google Scholar
2. Ohuchi, F. S. and Freilich, S. C., J. Vac. Sci. Technol. A 4, 1039 (1986).Google Scholar
3. Bartha, J. W., Hahn, P. O., LeGoves, f., and Ho, P. S., J. Vac. Sci. Technol. A 3, 1390 (1985).Google Scholar
4. Burkstrand, J. M., J. Appl. Phys. 52, 4795 (1981).Google Scholar
5. Jordan, J. L., Sanda, P. N., Morar, J. F., Kovac, C. A., Himpsel, F. J., and Pollak, R.A., J. Vac. Sci. Technol. A 4, 1046 (1986).Google Scholar
6. Michael, R. and Stulik, D., J. Vac. Sci. Techhnol. A 4, 1861 (1986); and references therein.Google Scholar
7. Sovey, J. S., J. Vac. Sci. Technol. 16, 813 (1979).Google Scholar
8. Baglin, J. E. E., and Clark, G. J., Nuclear Instruments and Methods in Physics Research B 7, 881 (1985).Google Scholar
9. Wheeler, D. R. and Pepper, S. V., J. Vac. Sci. Technol. 20, 442 (1982).Google Scholar
10. Schrott, A. G., Chang, Chin-An, and Baglin, J. E. E., (unpublished).Google Scholar