Symposium O – Ultraclean Semiconductor Processing Technology and Surface
Research Article
Recent Advances in Wet Processing Technology and Science
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- 15 February 2011, 3
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Studies of the Relationship between Megasonics, Surface Etching, and Particle Removal in SC-1 Solutions
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- 15 February 2011, 13
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A study of Cleaning Performance and Mechanisms in Dilute SC-1 Processing
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- 15 February 2011, 21
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Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication
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- 15 February 2011, 27
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Computational Fluid Dynamic Modeling and Flow Visualization of an Enclosed Wet Processing System
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- 15 February 2011, 35
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Surface Photovoltage Monitoring of Silicon Surface Native and Chemical Oxides following Wafer Cleaning and Rinsing Operations
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- 15 February 2011, 47
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Determination of Rinsing Parameters using a Wafer Gap Conductivity Cell in Wet Cleaning Tools
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- 15 February 2011, 55
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Electrochemical Aspects of Etching and Passivation of Silicon in Alkaline Solutions
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- 15 February 2011, 63
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Removal of Metallic Contaminants and Native Oxide from Silicon Wafer Surface by Pure Water Containing a Little Dissolved Oxygen
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- 15 February 2011, 69
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Investigation of Pre-Tungsten Silicide Deposition Wet Chemical Processing
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- 15 February 2011, 75
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Characterization of Defects Produced in TEOS Thin Films due to Chemical-Mechanical Polishing (CMP)
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- 15 February 2011, 85
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Impact of Chemomechanical Polishing on the Chemical Composition and Morphology of the Silicon Surface
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- 15 February 2011, 97
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Post-CMP Cleaning of W and SiO2: A Model Study
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- 15 February 2011, 109
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Cleaning of SiO2: Differences Between Thermal and Deposited Oxides
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- 15 February 2011, 115
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Post CMP Cleaning Using Ice Scrubber Cleaning
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- 15 February 2011, 121
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Effect of SC-1 Process Parameters on Particle Removal and Surface Metallic Contamination
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- 15 February 2011, 127
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Effects of SC-1 Dilution and Temperature Variations on Etch Rate and Surface Haze
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- 15 February 2011, 135
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Direct Surface Analysis of Organic Contamination for Semiconductor Related Materials
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- 15 February 2011, 143
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Deposition of Ca+, Na+, Al+, K+ on Single-Crystal Si From DIH20: NH40H: H202 and DIH20: HCL: H202 as Analyzed by ToF-SIMS and SPV
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- 15 February 2011, 151
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SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers
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- 15 February 2011, 157
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