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A study of Cleaning Performance and Mechanisms in Dilute SC-1 Processing

Published online by Cambridge University Press:  15 February 2011

P. J. Resnick ,
C. L. J. Adkins ,
P. J. Clews ,
E. V. Thomas  and
N. C. Korbe
P. J. Resnick
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. L. J. Adkins
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
P. J. Clews
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
E. V. Thomas
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
N. C. Korbe
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

A statistical design of experiments (DOE) approach has been employed to evaluate the effects of megasonic input power, solution chemistry, bath temperature, and immersion time on particle removal in SC-1 chemistries. Megasonic input power was the dominant factor in the response surface model. Substantially diluted chemistries, performed with high megasonic input power and moderate-to-elevated temperatures. were shown to be very effective for small particle removal. Follow-on studies to the original DOE have led to an investigation of ultradilute SC-1 chemistries with megasonic power. These chemistries ranged from 0 to 1000 ppm of NH4OH and H2O2. Post processing light point defect (LPD) counts differ substantially between bare n and p-type Si<100>, and ambient lighting conditions are shown to influence LPD counts on p-type Si<100>. Solution properties such as pH and oxidation potential have been studied, and an investigation of post processing silicon surface properties is underway.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 21
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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