Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T15:34:52.818Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of Rinsing Parameters using a Wafer Gap Conductivity Cell in Wet Cleaning Tools

Published online by Cambridge University Press:  15 February 2011

P. G. Lindquist ,
R. N. Walters ,
J. O. Throngard  and
J. J. Rosato
P. G. Lindquist
Affiliation:
Santa Clara Plastics, Ultra Clean Research and Development, 400 Benjamin Lane, Boise, ID 83704
R. N. Walters
Affiliation:
Santa Clara Plastics, Ultra Clean Research and Development, 400 Benjamin Lane, Boise, ID 83704
J. O. Throngard
Affiliation:
Santa Clara Plastics, Ultra Clean Research and Development, 400 Benjamin Lane, Boise, ID 83704
J. J. Rosato
Affiliation:
Santa Clara Plastics, Ultra Clean Research and Development, 400 Benjamin Lane, Boise, ID 83704
Get access

Abstract

A wafer gap conductivity cell determined which rinsing parameters control the removal of wafer cleaning and etching solutions. The first part of this study focused on set up and calibration of the conductivity cell. Sodium chloride solutions with known ionic conductivities are used as model fluids. Wafer rinsing experiments showing the concentration as a function of time are analyzed. The sensitivity of the wafer gap conductivity cell is compared to a wall mounted probe, the typical method used to measure rinsing efficiency. The conductivity results are explained using a fluid dynamics model of the wafer gap.

The second part of this study focused on using the wafer gap conductivity cell to study the removal of chemicals typically used in wafer cleaning processes. Experimental results show the effect of tank geometry and flow parameters on the time required for rinsing. Analysis shows the rinse process can be modeled by assuming convective fluid flow and ideal mixing. These results provide critical insight into the most important wafer rinsing parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 55
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rosato, J.J., Walters, R.N., Hall, R.M., Lindquist, P.G., Spearow, R.G., and Helms, C.R. in Proceedings of the 3rd International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by Ruzyllo, J. and Novack, R., (Electrochemical Society 184th Meeting, vol 94–7), 1993.Google Scholar
2. Hall, R.M., presented at the Santa Clara Plastics 2nd Symposium on Semiconductor Wafer Cleaning, Boise, ID, 1994.Google Scholar
3. Hall, R.M., Rosato, J.J., Lindquist, P.G., Jarvis, T., Kelly, J.D., and Walters, R.N., presented at the Balaz Symposium on Ultra Pure Water and Chemical Conference, Santa Clara, CA, 1995.Google Scholar
4. Kempka, S.N., Torcznski, J.R., Geller, A.S., Rosato, J.J., Waters, R.N., and Sibbet, S.S., presented at Micro 94, San Jose, CA, pp 225–234, 1994.Google Scholar
5. Tonti, A. in Proceedings of the 2nd International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. edited by Ruzyllo, J. and Novack, R., (Electrochemical Society Meeting, vol 92–12), pp. 41–47, 1993.Google Scholar
6. Olen, R.D., Thornton, R.D., presented at the 2nd annual Semiconductor Pure Water Conference, San Jose, CA, 1983; Thornton Associates marketing information, Waltham, MA, 1984.Google Scholar
7. Cussler, E.L., Diffusion Mass Transfer in Fluid Systems, (Cambridge University Press, Cambridge, U.K., 1984).Google Scholar
8. Lindquist, P.G., 1995 (unpublished).Google Scholar