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Recent Advances in Wet Processing Technology and Science

Published online by Cambridge University Press:  15 February 2011

Steven Verhaverbeke ,
Rochdi Messoussi ,
Hitoshi Morinaga  and
Tadahiro Ohmi
Steven Verhaverbeke
Affiliation:
Tohoku University, Sendai, Japan
Rochdi Messoussi
Affiliation:
Tohoku University, Sendai, Japan
Hitoshi Morinaga
Affiliation:
Tohoku University, Sendai, Japan
Tadahiro Ohmi
Affiliation:
Tohoku University, Sendai, Japan
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Extract

For the cleaning of silicon substrates, a mixture of an oxidizing and an etching agent is often used. One of the first successful mixtures (1970) is the well known APM or SC-1 cleaning (NH4OH/H2O2/H2O) (1). Since then, other mixtures (oxidizing agent/etching agent) such as HNO3/HF (2), H2O2/HF (3) were developed. For the cleaning of silicon substrates, a mixture of an oxidizing agent and an etching agent always results in good particle performance, since the Si under the particles is continuously oxidized and etched simultaneously (2,3).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 3
Copyright
Copyright © Materials Research Society 1995

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References

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