Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:12:29.874Z Has data issue: false hasContentIssue false
  • English
  • Français

Cleaning of SiO2: Differences Between Thermal and Deposited Oxides

Published online by Cambridge University Press:  15 February 2011

M. Ravkin ,
J. J. Farber ,
I. J. Malik ,
J. Zhang ,
A. J. Jensen ,
J. M. de Larios  and
W. C. Krusell
M. Ravkin
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
J. J. Farber
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
I. J. Malik
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
J. Zhang
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
A. J. Jensen
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
J. M. de Larios
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
W. C. Krusell
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
Get access

Abstract

The effects described in this paper are specific to cleaning with mechanical brush scrubbing. Oxides, both thermally grown and deposited are common cleaning applications for mechanical brush scrubbing. Thermally grown oxides present higher final defect counts after scrubbing with deionized water compared to deposited oxides. In this paper we present our results on the cleaning of unpolished and polished oxide surfaces and show differences in these results to be dependent on the chemistry used for cleaning and the degree of hydrophilicity of the wafer surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 115
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Krusell, W.C., de Larios, J.M., The Resurgence of Mechanical Brush Scrubbing, Semicon Korea, Presentation.Google Scholar
2. Hetherington, D.L., Resnick, P.J., Timon, R.P., Draper, B.L., Ravkin, M., de Larios, J.M., Krusell, W.C., Madhani, A.F., (February, 1995 VUMIC).Google Scholar
3. Malik, I.J., Zhang, J., Jensen, A.J., Farber, J.J., Krusell, W.C., O2. 4, MRS, (1995 Spring).Google Scholar
4. Iler, R.K., The Chemistry of Silica, pp. 643–700, (John Wiley & Sons, NY, 1979).Google Scholar
5. Roy, S.R., Ali, I., Shinn, G., Furusawa, N., Shahn, R., Peterman, S., Witt, K., Eastman, S., J. Electrochem. Soc., Vol.142, No. 1, (January 1995).Google Scholar
6. Mouche, L., Tardif, F. and Derrien, J., J. Electrochem. Soc., Vol.141, No. 6, 1684, (June 1994)Google Scholar
7. Verhaverbeke, S., Messoussi, R. and Ohmi, T., UCPSS, P35, (1994).Google Scholar