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Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation
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- 18 February 2014, pp. 3-8
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High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation
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- 17 February 2014, pp. 9-14
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InGaN structure influence on efficiency droop
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- 21 March 2014, pp. 15-22
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Atomic-layer Deposition for Improved Performance of III-N Avalanche Photodiodes
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- 17 February 2014, pp. 23-28
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Electrical Characterization of Thick InGaN Films for Photovoltaic Applications
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- 17 February 2014, pp. 29-34
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Growth of hBN Using Metallic Boron: Isotopically Enriched h10BN and h11BN
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- 16 January 2014, pp. 35-40
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Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy
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- 27 January 2014, pp. 43-48
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Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study
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- 17 February 2014, pp. 49-54
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Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells
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- 08 April 2014, pp. 55-62
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OMVPE of InAlAs Using Alternative Al and As Precursors
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- 27 January 2014, pp. 63-68
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Microwave reflection study of ultra-high mobility GaAs/AlGaAs 2D-electron system at large filling factors
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- 27 January 2014, pp. 69-74
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Leakage currents of large area InP/InGaAs heterostructures
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- 27 January 2014, pp. 75-81
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Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor
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- 27 January 2014, pp. 83-88
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Some aspects of AIIIBV and AIIBVI growth
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- 21 March 2014, pp. 89-93
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Production and biofunctionalization of elongated semiconducting nanocrystals for ex-vivo applications
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- 27 January 2014, pp. 97-102
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Optical Fabrication of Semiconductor Single-Crystalline Microspheres in Superfluid Helium
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- 27 January 2014, pp. 103-108
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Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures
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- 06 February 2014, pp. 109-114
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GaSb on Si: Structural Defects and Their Effect on Surface Morphology and Electrical Properties
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- 17 February 2014, pp. 115-120
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Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process
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- 27 January 2014, pp. 121-126
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Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD
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- 16 January 2014, pp. 127-132
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