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Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  27 January 2014

Yongkun Sin ,
Stephen LaLumondiere ,
William Lotshaw  and
Steven C. Moss
Yongkun Sin
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
William Lotshaw
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
Steven C. Moss
Affiliation:
Electronics and Photonics Laboratory, The Aerospace Corporation El Segundo, CA 90245-4691
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Abstract

We investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

Keywords

III-Voptoelectronicradiation effects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 43 - 48
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Piva, P. G., et al. ., “Enhanced degradation resistance of quantum dot lasers to radiation damage,” Appl. Phys. Lett. 77, pp. 624–626, 2000.CrossRefGoogle Scholar
Leon, R., et al. ., “Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots,” IEEE Trans. Nucl. Sci. 49, pp. 2844–2851, 2002.CrossRefGoogle Scholar
O’Driscoll, I., et al. ., “Effect of proton bombardment on InAs dots and wetting layer in laser structures,” Appl. Phys. Lett. 100, 261105, 2012.CrossRefGoogle Scholar
Sin, Y., et al. ., “Root cause investigation of catastrophic degradation in high power multi-mode InGaAs-AlGaAs strained quantum well lasers,” Proc. of SPIE 7583, 758307, 2010.Google Scholar
Barry, A. L., et al. ., “The energy dependence of lifetime damage constants in GaAs LEDs for 1 – 500 MeV protons”, IEEE Trans. Nucl. Sci. 42, pp. 2104–2107, 1995.CrossRefGoogle Scholar