Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T07:51:35.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD

Published online by Cambridge University Press:  16 January 2014

Mei Shen ,
Amir Afshar ,
Manisha Gupta ,
Gem Shoute ,
Ken Cadien ,
Ying Yin Tsui  and
Doug Barlage
Mei Shen
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Amir Afshar
Affiliation:
Department of Chemical and Material Engineering, University of Alberta, Alberta, Canada.
Manisha Gupta
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Gem Shoute
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Ken Cadien
Affiliation:
Department of Chemical and Material Engineering, University of Alberta, Alberta, Canada.
Ying Yin Tsui
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Doug Barlage
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Get access

Abstract

An electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively. The PEALD deposited ZnO Schotty diodes demonstrated an on/off rectifying ratio of about 25 at ±1 V. The leakage current values of the PLD deposited ZnO Schottky diodes are significantly larger than those of PEALD, leading to a poor on/off rectifying ratio of ∼4. Due to the small thickness, a critical breakdown strength of 1.3 MV/cm was estimated for PEALD-ZnO thin films.

Keywords

atomic layer depositionII-VIelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 127 - 132
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

Matsubara, K. et al. , Thin Solid Films 431-432, 369 (2003).CrossRefGoogle Scholar
Park, S.-H. K. et al. , Advanced Materials 21(6), 678 (2009).CrossRefGoogle Scholar
Ito, M. et al. , IEICE transactions on electronics 90(11), 2105 (2007).CrossRefGoogle Scholar
Feng, Z. C., Handbook of Zinc Oxide and Related Materials: Volume One, Material. (Taylor & Francis Group, FL, 2012) p.7.Google Scholar
Janotti, A. and Van de Walle, C. G., Reports on Progress in Physics 72(12), 126501 (2009).CrossRefGoogle Scholar
Albrecht, J. and Ruden, P., Journal of Applied Physics 86(12), 6864 (1999).CrossRefGoogle Scholar
Yoder, M., Electron Devices, IEEE Transactions on 43(10), 1633 (1996).CrossRefGoogle Scholar
Wang, L.-m., 25th International Conference on Microelectronics, May, 2006.Google Scholar
Özgür, U. et al. , Journal of Applied Physics 98(4), 041301 (2005).CrossRefGoogle Scholar
Avrutin, V. et al. , Proceedings of the IEEE 98(7), 1269 (2010).CrossRefGoogle Scholar
Nakano, M. et al. , Applied Physics Letters 93(12), 123309 (2008).CrossRefGoogle Scholar
Polyakov, A. Y. et al. , Applied Physics Letters 83(8), 1575 (2003).CrossRefGoogle Scholar
Ip, K. et al. , Applied Physics Letters 84(25), 5133 (2004).CrossRefGoogle Scholar
von Hauff, P, et al. , Applied Physics Letters 102(25), 251601 (2013).CrossRefGoogle Scholar
Gupta, M. et al. , Applied Physics A 110(4), 793 (2012).CrossRefGoogle Scholar
Allen, M. W. et al. , Applied Physics Letters 89, 103520 (2006).CrossRefGoogle Scholar
Ambacher, O. and Smart, J., Journal of Applied Physics 85(6), 3222 (1999).CrossRefGoogle Scholar
Kim, H.-K. et al. , Journal of The Electrochemical Society 148(3), G114 (2001).CrossRefGoogle Scholar
Baliga, B. J., Fundamentals of Power Semiconductor Devices. (Springer, 2008) p.15.CrossRefGoogle Scholar
Tung, R., Physical Review Letters 52(6), 461 (1984).CrossRefGoogle Scholar