Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:17:54.857Z Has data issue: false hasContentIssue false
  • English
  • Français

Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study

Published online by Cambridge University Press:  17 February 2014

Kanika Bansal  and
Shouvik Datta
Kanika Bansal
Affiliation:
Indian Institute of Science Education and Research, Pune – 411008 India.
Shouvik Datta
Affiliation:
Indian Institute of Science Education and Research, Pune – 411008 India.
Get access

Abstract

We report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, beyond conventional models, to understand an active light emitting diode under charge carrier injection. We suggest that the low frequency response can compromise the performance of these diodes under high frequency applications. We also suggest how internal quantum well structure can affect modulated light output efficiency of the device.

Keywords

optoelectronicdefectsIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 49 - 54
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sze, S. M. and Ng, K. K., Physics of Semiconductor Devices (Wiley, New York, 2007).Google Scholar
Bansal, K. and Datta, S., J. Appl. Phys. 110, 114509 (2011).CrossRefGoogle Scholar
Bansal, K., Phys. Status Solidi C 10, 593 (2013).CrossRefGoogle Scholar
Bansal, K. and Datta, S., Appl. Phys. Lett. 102, 053508 (2013).CrossRefGoogle Scholar
Hanamura, E. and Haug, H., Phys. Rep. 33, 209 (1977).CrossRefGoogle Scholar
See SanyoLDCatalogue2008 for more details.Google Scholar
Nelson, J., Paxman, M., Barnham, K. W. J., Roberts, J. S., and Button, C., IEEE J. Quantum Electron. 29, 1460 (1993).CrossRefGoogle Scholar
Fox, A. M., Miller, D. A. B., Livescu, G., Cunningham, J. E., and Jan, W. Y., IEEE J. Quantum Electron. 27, 2281 (1991).CrossRefGoogle Scholar