Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant…
Research Article
Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers
-
- Published online by Cambridge University Press:
- 10 February 2011, 3
-
- Article
- Export citation
Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants
-
- Published online by Cambridge University Press:
- 10 February 2011, 9
-
- Article
- Export citation
Sub-Nm Screening Layer Approach for Ultra Shallow Junction Formation
-
- Published online by Cambridge University Press:
- 10 February 2011, 15
-
- Article
- Export citation
Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects
-
- Published online by Cambridge University Press:
- 10 February 2011, 19
-
- Article
- Export citation
Shallow Boron Implant Activation
-
- Published online by Cambridge University Press:
- 10 February 2011, 31
-
- Article
- Export citation
Sub-30 nm abrupt P+ junction formation with Ge preamorphization and high energy Si Co-implantation
-
- Published online by Cambridge University Press:
- 10 February 2011, 37
-
- Article
- Export citation
Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation
-
- Published online by Cambridge University Press:
- 10 February 2011, 43
-
- Article
- Export citation
Decaborane as Ion Source Material for Boron Implantation
-
- Published online by Cambridge University Press:
- 10 February 2011, 49
-
- Article
- Export citation
Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants
-
- Published online by Cambridge University Press:
- 10 February 2011, 55
-
- Article
- Export citation
Fabrication of Shallow Junctions with Conventional Furnace Equipment by Using Silicon Preimplants
-
- Published online by Cambridge University Press:
- 10 February 2011, 65
-
- Article
- Export citation
Comparison of Ultra-low-energy Ion Implantation of Boron and BF2
-
- Published online by Cambridge University Press:
- 10 February 2011, 71
-
- Article
- Export citation
Defects and Diffusion in Silicon: An Overview
-
- Published online by Cambridge University Press:
- 10 February 2011, 79
-
- Article
- Export citation
Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon
-
- Published online by Cambridge University Press:
- 10 February 2011, 91
-
- Article
- Export citation
Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures
-
- Published online by Cambridge University Press:
- 10 February 2011, 97
-
- Article
- Export citation
The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and Sige
-
- Published online by Cambridge University Press:
- 10 February 2011, 103
-
- Article
- Export citation
The Influence of Damage and Dopant on the Blister Formation in Hydrogen Implanted Silicon
-
- Published online by Cambridge University Press:
- 10 February 2011, 109
-
- Article
- Export citation
Sensitivity of Electrically Active Defect Spectra to Processing Conditions in Mev Heavy Ion Implanted Silicon
-
- Published online by Cambridge University Press:
- 10 February 2011, 115
-
- Article
- Export citation
Modeling of {311} Defects
-
- Published online by Cambridge University Press:
- 10 February 2011, 123
-
- Article
- Export citation
Atomistic Simulations of Damage Evolution in Silicon
-
- Published online by Cambridge University Press:
- 10 February 2011, 135
-
- Article
- Export citation
On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion
-
- Published online by Cambridge University Press:
- 10 February 2011, 141
-
- Article
- Export citation