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Atomistic Simulations of Damage Evolution in Silicon

Published online by Cambridge University Press:  10 February 2011

Marius M. Buneat ,
Pavel Fastenko  and
Scott T. Dunham
Marius M. Buneat
Affiliation:
Department of Physics, Department of Electrical and Computer EngineeringBoston University. Boston, MA 02215.
Pavel Fastenko
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, http://engc.bu.edu/-mbunea
Scott T. Dunham
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, http://engc.bu.edu/-mbunea
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Abstract

We have studied the damage annealing process using kinetic lattice Monte Carlo (KLMC) and molecular dynamics (MD) with initial damage distribution from Monte Carlo ion implant simulations. MD calculations find a long range interstitial vacancy interaction, as also seen in previous tight-binding molecular dynamics (TBMD) simulations.1 The influence of the long range interaction as well as the initial spatial correlations present in the implant damage are then analyzed with KLMC in the form of corrections to the +1 model. We find that both long range interactions and the initial spatial correlations are significant at low doses, while the effects disappear at high doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 135
Copyright
Copyright © Materials Research Society 1999

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References

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