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Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers

Published online by Cambridge University Press:  10 February 2011

Aditya Agarwal ,
H.-J. Gossmann  and
D. J. Eaglesham
Aditya Agarwal
Affiliation:
Eaton Semiconductor Equipment Operations, 55 Cherry Hill Drive, Beverly, MA 01915
H.-J. Gossmann
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Silicon layers containing B in excess of a few atomic percent create a supersaturation of Si self-interstitials in the underlying Si, resulting in enhanced diffusion of B in the substrate (boron-enhanced diffusion, BED). The temperature- and time-dependence of BED is investigated here. Evaporated-boron as well as ultra-low energy 0.5-keV B-implanted layers were annealed at temperatures from 1100 to 800°C for times ranging from 3 to 3000s. Isochronal 10s anneals reveal that the BED effect increases with increasing temperature up to 1050°C and then decreases. In contrast, a simulation of interstitial generation via the kick-out mechanism predicts a decreasing dependence on increasing temperature leading to the conclusion that the kick-out mechanism is not the dominant source of excess interstitials responsible for BED. The diffusivity enhancements from the combined effects of BED and TED (transient-enhanced diffusion), measured in 2×105cm−2, 0.5-keV B-implanted samples, show a similar temperature dependence as seen for evaporated B, except that the maximum enhancement occurs at 1000°C. The temperature-dependent behavior of BED supports the hypothesis that the source of excess interstitials is the formation of a silicon boride phase in the high B concentration silicon layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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References

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