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Decaborane as Ion Source Material for Boron Implantation

Published online by Cambridge University Press:  10 February 2011

Marek Sosnowski ,
Ravidath Gurudath ,
John Poate ,
Anthony Mujsce  and
Dale Jacobson
Marek Sosnowski
Affiliation:
New Jersey Institute of Technology, Newark, NJ
Ravidath Gurudath
Affiliation:
New Jersey Institute of Technology, Newark, NJ
John Poate
Affiliation:
New Jersey Institute of Technology, Newark, NJ
Anthony Mujsce
Affiliation:
Bell laboratories, Lucent Technologies, Murray Hill, NJ
Dale Jacobson
Affiliation:
Bell laboratories, Lucent Technologies, Murray Hill, NJ
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Abstract

Formation of p-type shallow junctions for future generations of Si technology will require ion implantation of B at very low energies, i.e. below 1 keV, where the beam formation and transport at reasonably high currents are hindered by Coulomb repulsion of ions at high volume density. An alternative to implantation of monomer ions at a very low energy is implantation of large molecular ions at a higher energy. In the latter case, the implantation depth of the atoms corresponds to a fraction of the beam energy, partitioned between the atoms of the molecule. The decaborane molecule (B10H14) is of particular interest for implantation of p-type shallow junction in Si, because each of the B atoms carries only 9% of the molecule's kinetic energy. Experimental PMOS devices made using decaborane implantation have been demonstrated recently. It also has been shown that transient enhanced diffusion (TED) of B in Si implanted with B ions and with decaborane ions at the equivalent dose and energy are the same. The prospect for using decaborane in ion sources is examined, based on measurements of its ionization and dissociation properties. It is shown that decaborane molecules are effectively ionized by electron impact in the energy range near 100 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 49
Copyright
Copyright © Materials Research Society 1999

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