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Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

Published online by Cambridge University Press:  10 February 2011

M. A. Foad ,
A. J. Murrell ,
E. J. H. Collart ,
G. de Cock ,
D. Jennings  and
M. I. Current
M. A. Foad
Affiliation:
Applied Materials, Thermal Processing and Implant Divisions 3050 Bowers Avenue. Santa Clara, CA 95054 USA.
A. J. Murrell
Affiliation:
Applied Materials, Thermal Processing and Implant Divisions 3050 Bowers Avenue. Santa Clara, CA 95054 USA.
E. J. H. Collart
Affiliation:
Applied Materials, Thermal Processing and Implant Divisions 3050 Bowers Avenue. Santa Clara, CA 95054 USA.
G. de Cock
Affiliation:
Applied Materials, Thermal Processing and Implant Divisions 3050 Bowers Avenue. Santa Clara, CA 95054 USA.
D. Jennings
Affiliation:
Applied Materials, Thermal Processing and Implant Divisions 3050 Bowers Avenue. Santa Clara, CA 95054 USA.
M. I. Current
Affiliation:
Michael Current Scientific, 1729Comstock Way, San Jose, CA 95124 USA
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Abstract

As the drive towards the production of 100 nm CMOS devices pick up speed, the practical aspect of transistor shallow junction formation, including a large menu of process integration issues, must now be solved in a short order. The most direct path to 50 nm junction depths is through the sub-keV boron implantation and rapid thermal annealing.

The material aspects of the process integration centers on: (1) CMOS devices for shallow, highly-activated and abrupt junctions (involving the choice of ion species [B, BF, B10H14, BSi2, etc.], substrate materials [ Cz, Epi, SOI], anneal conditions [ramp rate, soak time, ambient gas], etc.) and (2) Defect-dopant interactions during annealing (including surface reactions of high concentration species [B, F], diffusion and carrier trapping by background and co-implanted species [C, 0, F, etc.].

Process data for atomic and electrical activity profiles as well as defect and interface structures will be presented to illustrate progress towards understanding these complex process interactions. A particular focus will be the effects of anneal ambient and rapid temperature rise times approaching the “pike” anneal ideal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 55
Copyright
Copyright © Materials Research Society 1999

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References

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