Graphite encapsulated nanoparticles have numerous possible applications due to their novel properties and their ability to survive rugged environments. Evaporation of Fe, Ni, or Co with graphite in a hydrogen atmosphere results in graphite encapsulated nanoparticles found on the chamber walls. Similar experiments in helium lead to nanoparticles embedded in an amorphous carbon/fullerene matrix. Comparing the experimental results in helium and hydrogen, we propose a mechanism for the formation of encapsulated nanoparticles. The hydrogen arc produces polycyclic aromatic hydrocarbon (PAH) molecules, which can act as a precursor to the graphitic layers around the nanoparticles. Direct evidence for this mechanism is given by using pyrene (C16H10), a PAH molecule, as the only carbon source to form encapsulated nanoparticles.

Solution processing methods have been used to prepare a solid electrolyte, copper-doped bismuth vanadate, and several different lithium transition metal oxide cathode materials. Dense thin films of the bismuth vanadate were prepared by pyrolysis of metal organic precursors deposited on various oxide substrates. A high degree of crystal orientation was obtained using single crystal MgO substrates. The Pechini process was used to prepare powders of the different materials and a variety of results were obtained. The bismuth vanadate exhibited a second phase of BiVO4 while LiNiO2 and the LiCoxNi1−xO2 solid solution require further efforts at obtaining the proper phase and stoichiometry. The LiCoO2 system formed readily and exhibited good electrochemical performance.

The oxidation of tin layers deposited onto alumina substrates is investigated with the aim to identify the different steps of the process and obtain information on the sample homogeneity, phase segregation, and degree of oxidation. It is shown that at least three phases coexist at 450 °C, Sn, SnO, and SnO2, and remarkable inhomogeneities, already visible at an optical inspection, are found in the thin film. A micro-Raman mapping of the layer shows that these inhomogeneities are related to the presence of different Sn oxidation states, as evidenced by the inhomogeneous distribution of SnO and SnOx Raman bands. The thin film becomes homogeneous after annealing treatments above 550 °C, where only the SnO2 cassiterite phase is detected.

[Si–Y–O–C–N] amorphous powders were synthesized by the pyrolysis at 1000 °C in N2 of chemically modified perhydropolysilazane using n-decyl alcohol and yttrium tri-methoxide. [Si–Y–O–C–N] amorphous powders yielded a unique fibrous microstructure by heat treatment in N2 at 1800 °C. The fibrous microstructure was composed of β–Si3N4 whiskers of submicron in diameter and more than 10 μm in length. Fully dense Si3N4 –SiC–Y2O3 ceramics were also fabricated by heat treatment at 1800 °C followed by powder-vehicle hot pressing at 1700 °C. After these two-step processings, [Si–Y–O–C–N] amorphous powders yielded a unique fine-grained microstructure composed of submicron grains with high aspect ratio.

Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 × 10-7-1 × 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test.

Helical etch channels were found to form in α-quartz when treated with anhydrous HF vapor at 400 °C. Both hydrogen and fluorine species were determined to play an important role in helix formation. Crystal orientation, quartz source, etch channel density, and surface pretreatments had no influence. Helix formation was altogether arrested when water was present in the etch vapor. The genesis of the helices remains unknown.

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.

Donor-doped BaTiO3 ceramics were prepared by adding PbO B2O3 SiO2 as a sintering aid. Semiconducting BaTiO3 was obtained at a sintering temperature of 1100 °C. The sintered samples exhibit the Positive Temperature Coefficient of Resistivity (PTCR) effect, which depends on the amount of liquid phase, the concentration of the donor-dopant, and the sintering temperature. The cold resistivity of the samples decreases when the sintering temperature increases. The increase of the grain boundary resistivity and hence of the cold resistivity at lower sintering temperatures was explained by applying the diffusion grain boundary layer model.

This paper presents tie-lines between Pr1+xBa2−xCu3O7−δ and liquid on a PrOy –BaO–CuO ternary phase diagram at 965, 970, 975, 980, and 990 °C in air atmosphere, for which knowledge is necessary to fabricate composition controlled Pr1+xBa2−xCu3O7−δ single crystals by the solution growth method. Liquidus faces have been investigated by dipping MgO single crystal rods into the thermal equilibrium melt at various temperatures and analyzing the composition of the adhering melt by ICP. The compositions of Pr1+xBa2−xCu3O7−δ solid solution coexisting with various compositions of liquids were obtained by quantitative EPMA analysis of quenched melts. Tie-lines were calculated by applying the lever rule to these experimental data for solid compositions and liquidus faces. Furthermore, the relationships between solid solubilities and peritectic temperatures of Pr1+xBa2−xCu3O7−δ are reported.

Ultrafast changes in the crystal structure of GaAs induced by intense femtosecond laser pulses are detected and investigated. Atomic force microscopy and Raman microprobe analysis of the laser-treated area show centrosymmetric (disordered) features which are different from the original zinc-blend structure of the GaAs lattice. The frozen-in structure shows evidence for a special heat transfer from the laser-induced crater to the boundary, namely the heat has been transferred ballistically by a high-density electron-hole plasma.

A simple model of the elastic stress in a composite hydrogen absorbing material is developed to account for the hydrogen storage properties of nanocrystalline FeTi with a network of intergranular phase having a wide storage site energy distribution. The model accounts for the equilibrium properties of nanocrystalline FeTi hydrogen absorbers made by ball-milling such as the narrowing of the miscibility gap and changes in plateau pressure. A second model is proposed for disconnected inclusions of the second phase. The effect of chemical disorder is also briefly examined.

Diamond coatings have been deposited by plasma enhanced chemical vapor deposition (PCVD) onto WC-Co cemented carbides by use of specially developed barrier interlayers, well compatible with cemented carbides. The barrier interlayer comprises a Ti-based layer adjacent to the substrate, which completely prevents both substrate decarburization and Co diffusion from the substrate, and a diamond-bonding layer needed to obtain high adhesion to the diamond coating. The diamond-bond layer is obtained by seeding the surface with nanograined diamond particles by laser ablation. Diamond deposition under controlled parameters allows one to obtain fine-grained and uniform diamond coatings. The diamond coating obtained in this way has a high adhesion to the cemented carbide substrate due to the enhanced interaction through the nanograined diamond interlayer.

BaTiO3, SrTiO3, and BaxSr1−x TiO3 thin films, as well as multilayers in the SrTiO3-BaTiO3 system, have been prepared on Ti substrates in newly constructed flow-system equipment by the hydrothermal-electrochemical method. The synthesis parameters (temperature of 120–200 °C, flow rate of 1–50 cm3/min) allow fabrication of dense, single-phase films with different morphology by controlling nucleation and/or growth rates. The flow system enables also an easy fabrication of SrTiO3/BaTiO3 and BaTiO3/SrTiO3 multilayers with variable chemical composition and microstructure across the film thickness. The multilayers can be prepared in only one experiment by simply changing the kind of flowing solution and/or adjusting the processing conditions.

A new method was developed to obtain high density, uniform diamond nuclei via bias-assisted hot filament chemical vapor deposition. A negative bias was applied between a mesh (installed above the filament) and the substrate to produce abundant uniform ions at the growth surface. Raman spectroscopy, scanning electron microscopy, and Auger electron microscopy were used to analyze the films obtained. The results show that a layer of diamond film with a nucleation density of 109/cm2 can be obtained after 10 min deposition under 1 Torr.

Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.

Biaxially textured YSZ films have a large technical relevance for power or electronic applications of HTS films. The YSZ serves as a diffusion barrier and as a template for an epitaxial growth of the HTS. On polycrystalline substrates the biaxial alignment is achieved by using an ion-beam-assisted deposition method. The best obtained textures were characterized by a full width at half maximum of 7° in an 〈111〉 x-ray diffraction Φ scan. The FWHM decreases with increasing film thickness. The growth mechanism is investigated with respect to three important effects: nucleation, growth selection, and homoepitaxial growth. It could be shown that during nucleation at the beginning of deposition the angle between the assisting beam and the substrate normal has to be fixed at 55°, whereas during the growth selection this angle can be varied. Especially the homoepitaxial effects allow changes in the deposition conditions without destroying the already achieved texture quality.

An elemental powder sintering (EPS) technique has been developed for the synthesis of porous NiTi alloy, in which Ni and Ti powders are used as the reactants and TiH2 powder is added as a pore-forming agent and active agent. Effects of various experimental parameters (sintering temperature, sintering time, and TiH2 content) on the porosity, pore size, and pore distribution as well as phase composition in experimental alloys are investigated. It is found that in order to avoid the formation of carcinogenic pure Ni phase, the porous NiTi alloy should be synthesized over a temperature of 1223 K. This gives NiTi as the main phase without any elemental phase. Substitution of Ti by TiH2 is more economic and more favorable to obtain homogeneous porous NiTi alloy. A proper selection of initial powders, ball-milling, pressing, and sintering process makes it possible to achieve the porous NiTi alloy with desired properties.

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Grain boundary structure was examined in 0.1 mol% TiO2-excess BaTiO3 by high-resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Their grain boundaries were mostly faceted with {210} type habit. The faceted boundaries were characterized to be associated with an extra Ti–O2 bond with the rutile-like structure. The grain growth behavior in a small TiO2-excess BaTiO3 is discussed from the viewpoint of grain boundary structure.