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Cu films by partially ionized beam deposition for ultra large scale integration metallization

Published online by Cambridge University Press:  31 January 2011

Ki-Hwan Kim ,
Hong-Gui Jang ,
Sung Han ,
Hyung-Jin Jung ,
Seok-Keun Koh  and
Doo-Jin Choi
Ki-Hwan Kim*
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea
Hong-Gui Jang
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea
Sung Han
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea
Hyung-Jin Jung
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea
Seok-Keun Koh
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea
Doo-Jin Choi
Affiliation:
Department of Ceramic Engineering, Yonsei University, Seoul 120-794, Korea
*
a) Author correspondence to this author.[email protected]
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Abstract

Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 × 10-7-1 × 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 5 , May 1998 , pp. 1158 - 1163
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Arita, Y., Awaya, N., Ohno, K., and Sato, M., MRS Bull. XIX (8), 68 (1994).CrossRefGoogle Scholar
2.Miyazaki, H., Hideno, K., Hamma, Y., and Mukai, K., Extended Abstracts of 40th Fall Meeting 1987, Japanese Society of Applied Physics, Paper 17 p-s-16.Google Scholar
3.Luther, B.et al., in Proceedings of the 1993 VLSI Multilevel Interconnect Conference, Santa Clara, CA, p. 15.Google Scholar
4.Gelatos, A. V., Marsh, R., Kottke, M., and Mogabs, C. J., Appl. Phys. Lett. 130, L37 (1992).Google Scholar
5.Burret, A. F. and Cech, J. M., J. Vac. Sci. Technol. A11, 2970 (1993).Google Scholar
6.Li, J. and Shacham-Diamand, Y., J. Electrochem. Soc. 139, L37 (1992).CrossRefGoogle Scholar
7.Silicon Processing for VLSI Era, edited by Wolf, S. (1990), Vol. 2.Google Scholar
8.Yamada, I., Nucl. Instrum. Methods, Phys. Res. B 37, 770 (1989).CrossRefGoogle Scholar
9.Takaoka, H., Ishikawa, J., and Takagi, T., J. Vac. Sci. Technol. A 3, 588 (1985).CrossRefGoogle Scholar
10.Koh, S. K., Jin, Z., Lee, J. Y., Kim, K. H., Choi, D. J., and Jung, H. J., J. Vac. Sci. Technol. A 13, 2123 (1995).CrossRefGoogle Scholar
11.Koh, S. K., Yoon, Y. S., Kim, K. H., Jung, H. J., and Lee, J. Y., Thin Solid Films 278, 45 (1996).CrossRefGoogle Scholar
12.Lee, D. N., J. Mater. Sci. 24, 4375 (1989).CrossRefGoogle Scholar
13.Maruyama, T. and Ikuta, Y., J. Mater. Sci. 28, 5540 (1993).CrossRefGoogle Scholar
14.Takaoka, G. H., Ishikawa, J., and Takagi, T., J. Vac. Sci. Technol. A 8, 840 (1990).CrossRefGoogle Scholar
15.Yoon, Y. S., Kim, K. H., Jang, H. G., Jung, H. J., and Koh, S. K., J. Vac. Sci. Technol. A 14, 2517 (1996).CrossRefGoogle Scholar
16.Koh, S. K., Lee, J. Y., Jin, Z., and Jung, H. J., New Phys. 34, 713 (1994).Google Scholar
17.Handbook of Ion Beam Processing Technology, edited by Cuomo, J. J. (Noyes, Park Ridge, NJ, 1989), p. 182.Google Scholar
18.Mayadas, A. F. and Shatzkes, M., Phys. Rev. B 1, 1382 (1970).CrossRefGoogle Scholar
19.Fuchs, F., Proc. Cambridge Philos. Soc. 34, 100 (1938).CrossRefGoogle Scholar
20.Introduction to Solid State Physics, 3rd ed., edited by Kittel, C. (Wiley and Sons, New York, 1966), p. 1341.Google Scholar
21.Soffer, S. B., J. Appl. Phys. 38, 1710 (1967).CrossRefGoogle Scholar
22.Rossnagel, S. M., Mikalsen, D., Kinoshita, H., and Cuomo, J. J., J. Vac. Sci. Technol. A 9, 261 (1991).CrossRefGoogle Scholar
23.Comello, V., Semicond. Inst., March, 67 (1991).Google Scholar
24.Yang, J., Wang, C., Tao, K., and Fan, Y., J. Vac. Sci. Technol. A 13, 481 (1995).CrossRefGoogle Scholar