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The effect of oxygen partial pressure during cooling on lead zirconate titanate thin film growth by using rf magnetron sputtering method

Published online by Cambridge University Press:  31 January 2011

Dong Joo Kim ,
Tae Song Kim ,
Jeon Kook Lee  and
Hyung Jin Jung
Dong Joo Kim
Affiliation:
Thin Film Technology Research Center, KIST, 39–1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
Tae Song Kim*
Affiliation:
Thin Film Technology Research Center, KIST, 39–1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
Jeon Kook Lee
Affiliation:
Thin Film Technology Research Center, KIST, 39–1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
Hyung Jin Jung
Affiliation:
Thin Film Technology Research Center, KIST, 39–1 Haweolgog-dong, Seongbuk-gu, Seoul 136–791, Korea
*
a) Address all correspondence to this author.
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Abstract

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 12 , December 1998 , pp. 3442 - 3448
Copyright
Copyright © Materials Research Society 1998

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References

1.Evans, J. T., Jr. and Womack, R., IEEE J. Solid-State Circuit 23, 1171 (1988).CrossRefGoogle Scholar
2.Parker, L. H. and Tasch, A. F., IEEE Circuits and Device Magazine, Jan. 17 (1990).Google Scholar
3.Polla, D. L., Ye, C., Schiller, P., Tamagawa, T., Robbins, W. P., Glumac, D., and Hsueh, C-C., in Ferroelectric Thin Film II, edited by Kingon, A., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc 243, Pittsburgh, PA, 1992), p. 55.Google Scholar
4.Auciello, O., Kingon, A. I., and Krupanidhi, S. B., MRS Bull. 21, 25 (1996).CrossRefGoogle Scholar
5.Kim, T. S., Kim, D. J., Lee, J. K., and Jung, H. J., in Ferroelectric Thin Film V, edited by Desu, S. B., Ramesh, R., Tuttle, B. A., Jones, R. E., and Yoo, I. K. (Mater Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1996), p. 243.Google Scholar
6.Krupanidhi, S. B., Maffei, N., Sayer, M., and El-Assal, K., J. Appl. Phys. 54, 6601 (1983).CrossRefGoogle Scholar
7.Sreenivas, K. and Sayer, M., J. Appl. Phys. 64, 1484 (1988).CrossRefGoogle Scholar
8.Kingon, A. I., Al-Shareef, H. N., Gifford, K. D., Graettinger, T. M., Rou, S. H., Hren, P. D., Auciello, O., and Bernacki, S., Integrated Ferroelectrics 2, 361 (1992).CrossRefGoogle Scholar
9.Fox, G. R. and Krupanidhi, S. B., J. Mater. Res. 9, 699 (1994).CrossRefGoogle Scholar
10.Kwok, C. K. and Desu, S. B., in Ferroelectric Thin Film II, edited by Kingon, A., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 393.Google Scholar
11.Lee, J. and Ramesh, R., Appl. Phys. Lett. 68, 484 (1996).CrossRefGoogle Scholar
12.Lee, J., Ramesh, R., Keramidas, V. G., Warren, W. L., Pike, G. E., and Evans, J. T., Jr., Appl. Phys. Lett. 66, 1337 (1995).CrossRefGoogle Scholar
13.Huffman, M., Goral, J. P., Al-Jassim, M. M., Mason, A. R., and Jones, K. M., Thin Solid Films 193/194, 1017 (1990).Google Scholar
14.Lee, S. C., Teowee, G., Schrimpe, R. D., Birnie, D. P., III, Uhlmann, D. R., and Galloway, K. F., Integrated Ferroelectrics 4, 31 (1994).Google Scholar
15.Lee, J., Chikarmane, V., Sudhama, C., Kim, J., and Tasch, A., Proc. 4th Int. Symp. Integr. Ferroelectrics (Montery, CA, 1992), p. 298.Google Scholar
16.Yoo, I. K. and Desu, S. B., Mater. Sci. Eng. B13, 319 (1992).CrossRefGoogle Scholar
17.Pike, G. E., Warren, W. L., Dimos, D., Tuttle, B. A., Ramesh, R., Lee, J., Keramidas, V. G., and Evans, J. T., Jr., Appl. Phys. Lett. 66, 484 (1995).CrossRefGoogle Scholar
18.Warren, W. L., Dimos, D., Pike, G. E., Tuttle, B. A., Raymond, M. V., Ramesh, R., and Evans, J. T., Jr., Appl. Phys. Lett. 67, 866 (1995).CrossRefGoogle Scholar