Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III
Research Article
High Doped p-Type GaN Grown by Alternative Co-Doping Technique
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- 01 February 2011, F1.1
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Native Defect Formation and Ionization Energies in Cadmium Telluride
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- 01 February 2011, F8.31
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Behavior of copper in CdGeAs2 crystals
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- 01 February 2011, F8.32
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Application of X-ray synchrotron techniques to the characterization of the chemical nature and recombination activity of grown-in and process-induced defects and impurities in solar cells
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- 01 February 2011, F6.6
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Thermal Evolution of Deuterium in 4H-Sic
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- 01 February 2011, F9.7
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Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation
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- 01 February 2011, F8.6
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First-Principles Simulation of Hydrogen Interaction in Amorphous Silicon Nitride
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- 01 February 2011, F8.37
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Gettering by Overpressurized Bubbles Induced by High-Energy-He-Implantation In Silicon
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- 01 February 2011, F4.2
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Defect Engineering in CCD Image Sensors
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- 01 February 2011, F5.2
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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 100>
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- 01 February 2011, F8.11
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Roughness of electronic interfaces in Ga As p-n multilayers investigated by cross-sectional scanning tunneling microscopy
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- 01 February 2011, F12.4
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Possible shallowing of nitrogen donors in diamond
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- 01 February 2011, F2.2
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Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs
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- 01 February 2011, F1.4
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Application Of Room-Temperature Photoluminescence For Characterizing Thermally Processed Cz Silicon Wafers
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- 01 February 2011, F6.5
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Optical Methods for Defect Characterization in Light-Ion Implanted Silicon Carbide
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- 01 February 2011, F8.17
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Low-Temperature Properties of Compensated Ge Films Used for Cryogenic Thermometers
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- 01 February 2011, F8.43
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Comparative Investigation of Photoluminescence of In- and Si- doped GaN/AlGaN Multi-Quantum Wells
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- 01 February 2011, F8.26
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Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures
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- 01 February 2011, F13.10
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The Strain relaxation and dislocation density of SiGe films in micron size window with different mask material grown by MBE
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- 01 February 2011, F8.39
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Charges and Dipoles at Semiconductor Interfaces
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- 01 February 2011, F12.1
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