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Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

Published online by Cambridge University Press:  01 February 2011

Saulius Marcinkevièius ,
Andreas Gaarder ,
Jörg Siegert ,
Jean-Fraņois Roux ,
Jean-Louis Coutaz ,
Agnieszka Wolos ,
Maria Kaminska ,
Ramūnas Adomavičius ,
Klemensas Bertulis  and
Arunas Krotkus
Saulius Marcinkevièius
Affiliation:
Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
Andreas Gaarder
Affiliation:
Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
Jörg Siegert
Affiliation:
Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
Jean-Fraņois Roux
Affiliation:
LAHC, University of Savoie, 73 376 Le Bourget du Lac Cedex, France
Jean-Louis Coutaz
Affiliation:
LAHC, University of Savoie, 73 376 Le Bourget du Lac Cedex, France
Agnieszka Wolos
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw, Poland
Maria Kaminska
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw, Poland
Ramūnas Adomavičius
Affiliation:
Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
Klemensas Bertulis
Affiliation:
Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
Arunas Krotkus
Affiliation:
Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
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Abstract

A number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F1.4
Copyright
Copyright © Materials Research Society 2002

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