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Thermal Evolution of Deuterium in 4H-Sic

Published online by Cambridge University Press:  01 February 2011

R. Delamare ,
E. Ntsoenzok ,
T. Sauvage ,
A. Shiryaev ,
A. van Veen  and
Ch. Dubois
R. Delamare
Affiliation:
CERI/CNRS, 3A rue de la Férollerie, 45071 Orléans, France
E. Ntsoenzok
Affiliation:
CERI/CNRS, 3A rue de la Férollerie, 45071 Orléans, France
T. Sauvage
Affiliation:
CERI/CNRS, 3A rue de la Férollerie, 45071 Orléans, France
A. Shiryaev
Affiliation:
IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands Institute of Crystallography, Leninsky Pr. 59, 117333 Moscow, Russia
A. van Veen
Affiliation:
IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
Ch. Dubois
Affiliation:
LPM, INSA, Bât. 502, 69621 Villerbanne, France
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Abstract

4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption spectroscopy (TDS) were carried out to characterize the evolution of implantation induced defects upon annealing. According to the NRA measurements, no deuterium release was found in the sample annealed at 1000°C. However, increasing the temperature to 1150°C led to a 40% decrease of deuterium content. Similar results about the evolution of D profiles upon annealing have also been obtained by SIMS measurements. In addition, SIMS measurements show that the maximum of the deuterium concentration shifts to the surface. Deuterium desorption at annealing temperatures higher than 1000°C was further confirmed by TDS experiments. Results from RBS/C indicated that during the desorption of deuterium, the implantation induced damage was annealed. These results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F9.7
Copyright
Copyright © Materials Research Society 2002

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