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Optical Methods for Defect Characterization in Light-Ion Implanted Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

Claudiu I. Muntele ,
Iulia C. Muntele ,
Daryush Ila ,
David B. Poker  and
Dale K. Hensley
Claudiu I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, P. O. Box 1447, Normal, AL -35762, U. S. A., Phone 1-256-851-5866, Fax 1-256-851-5868, Email [email protected]
Iulia C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, P. O. Box 1447, Normal, AL -35762, U. S. A., Phone 1-256-851-5866, Fax 1-256-851-5868, Email [email protected]
Daryush Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, P. O. Box 1447, Normal, AL -35762, U. S. A., Phone 1-256-851-5866, Fax 1-256-851-5868, Email [email protected]
David B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, U. S. A.
Dale K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, U. S. A.
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Abstract

The work reported here deals with studying the defects induced by light ion (Al, N) implantation in 4H and 6H silicon carbide, both p-type (Al-doped) and n-type (N-doped). Confocal Micro-Raman (MR) was used for monitoring the (480 – 540) cm-1 spectral region of amorphous silicon. A broad peak forms in this region because of silicon atoms relocated as interstitials, translating into a locally stressed crystalline lattice. The locally relaxed lattice at these atoms' locations of origin also gives a broadening of the characteristic Raman peaks of each type of material. UV/Vis Optical Absorption (OA) Spectroscopy has also been employed as a good tool for dopant and carrier trapping levels embedded in the band gap of the silicon carbide material. MR and OA data collected from virgin samples, as implanted, and after annealing at two different temperatures (1100 and 1600 °C) are discussed in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.17
Copyright
Copyright © Materials Research Society 2002

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