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Crystals (A Freshman Seminar): An Exercise on Cooperative and Peer Learning
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- 17 March 2011, BB1.2
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Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes
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- 17 March 2011, B4.3
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Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures
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- 17 March 2011, B1.3
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Island Scaling Effects on Photoluminescence of Strained SiGe/Si (100)
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- 17 March 2011, B8.4
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Diffusion of ion-implanted Boron and Silicon in Germanium
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- 17 March 2011, B8.10
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(Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
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- 17 March 2011, B1.2
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High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates
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- 17 March 2011, B7.4
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A Survey of Defects in Strained Si Layers
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- 17 March 2011, B1.5
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Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy
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- 17 March 2011, B8.19
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Strain Mapping in SiGe by Visible Raman Spectroscopy
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- 17 March 2011, B3.2
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Effect of Carbon on Diffusion of Boron in SiGe between 940 – 1050 °C
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- 17 March 2011, B10.2
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(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers
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- 17 March 2011, B9.5.1/C9.5
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Modeling Dopant Diffusion in SiGe and SiGeC alloys
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- 17 March 2011, B9.4.1/C9.4
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Stress Metrology : The challenge for the next generation of engineered wafers
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- 17 March 2011, B3.1
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Physical characterization of HfO2 deposited on Ge substrates by MOCVD
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- 17 March 2011, B5.4.1/D5.4
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Arsenic diffusion in Si and Si0.9Ge0.1 alloys: Effect of defect injection
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- 17 March 2011, B9.3.1/C9.3
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Analysis of junctions formed in strained Si/SiGe substrates
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- 17 March 2011, B6.4
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Phosphorus and Boron Implantation into (100) Germanium
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- 17 March 2011, B8.11
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Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator
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- 17 March 2011, B3.6
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Effect of Point Defect Injection on B diffusion in C containing Si and SiGe
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- 17 March 2011, B8.6
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