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High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

Published online by Cambridge University Press:  17 March 2011

Carl Mueller ,
Samuel Alterovitz ,
Edward Croke  and
George Ponchak
Carl Mueller
Affiliation:
Analex Corporation, Cleveland, OH, USA
Samuel Alterovitz
Affiliation:
NASA Glenn Research Center; Cleveland, OH, USA
Edward Croke
Affiliation:
HRL Laboratories LLC, Malibu, CA, USA
George Ponchak
Affiliation:
NASA Glenn Research Center; Cleveland, OH, USA
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Abstract

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm2/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rms roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 μm gate lengths and 200 μm gate widths were fabricated and tested. An IDS of 9 mA was obtained by operating the transistor in an enhancement mode (positive VGS) and the maximum transconductance (gm) was 37 mS/mm at a VDS of 2.5 V. The transducer gain (Gt) measured with a loadpull system was 6.4 dB at 1 GHz for a VDS of 2.5 V and VGS=-0.4 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B7.4
Copyright
Copyright © Materials Research Society 2004

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