Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-07T15:21:41.986Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion of ion-implanted Boron and Silicon in Germanium

Published online by Cambridge University Press:  17 March 2011

Suresh Uppal ,
A. F. W. Willoughby ,
J. M. Bonar ,
N. E. B. cowern ,
R. J. H. Morris  and
M. G. Dowsett
Suresh Uppal
Affiliation:
Material Research Group, School of Engineering Sciences, United Kindom
A. F. W. Willoughby
Affiliation:
Material Research Group, School of Engineering Sciences, United Kindom
J. M. Bonar
Affiliation:
Department Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
N. E. B. cowern
Affiliation:
Advance Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
R. J. H. Morris
Affiliation:
Physics Department, University of Warwick, Coventry, CV4 7AL, United Kingdom
M. G. Dowsett
Affiliation:
Physics Department, University of Warwick, Coventry, CV4 7AL, United Kingdom
Get access

Abstract

The diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B8.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chui, C. O. and Saraswat, K. C., in Electrochemical Society Proceedings, Abs. 205, 2004.Google Scholar
2. Dunlap, W. C. Jr., Phys. Rev., 94, 1531 (1954).Google Scholar
3. Meer, W. and Pommerrenig, D., Z. Angew. Phys., 23, 369 (1967).Google Scholar
4. Räisänen, J., Hirvonen, J., and Anttila, A., Solid-State Electronics, 24, 336 (1981).Google Scholar
5. Strohm, A., Ph.D. Thesis, University of Stuttgart, Germany, 2002.Google Scholar
6. Södervall, U. and Friesel, M., Defect and Diffusion Forum, 143–147, 1053 (1997).Google Scholar
7. Uppal, Suresh, Willoughby, Arthur F. W., Bonar, Janet M., Evans, Alan G. R., Cowern, Nick E. B., Morris, Richard, and Dowsett, Mark G., Journal of Applied Physics, 90, 4293 (2001).Google Scholar
8. Uppal, Suresh, Willoughby, Arthur F. W., Bonar, Janet M., Cowern, Nick E. B., Grasby, Tim, Morris, Richard J. H., and Dowsett, Mark G., Submitted to Journal of Applied Physics.Google Scholar
9. Uppal, Suresh, Willoughby, Arthur F. W., Bonar, Janet M., Cowern, Nick. B., Morris, Richard J. H., and Bollani, Monica in CMOS Front-End Materials and Process Technology, Edited by King, Tsu-Jae, Robert, Bin Yu Lander, J. P., Saito, Shuichi, (Mater. Res. Soc. Symo. Proc. 765, Pittsburgh, PA, 2003) 217–222.Google Scholar
10. Stolwijk, N. A., in Impurities and Defects in Group IV elements and III-V compounds, Landolt-Börnstein, New Series, vol. III/22b, edited by Schluz, M. (Springer, Berlin, 1989).Google Scholar
11. Hu, S. M., Physica Status Solidi (B), 60, 595 (1973).Google Scholar
12. Frank, W., Gsele, U., Mehrer, H. and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G. E. and Nowich, A. S. (Academic Press, London, 1984) pp. 63–142.Google Scholar
13. Laitinen, P., Strohm, A., Huikari, J., Nieminen, A., Voss, T., Gordon, C., Riihimäki, I., Kummer, M., Äystö, J., Dendooven, P., Räisänen, J., Frank, W., and the ISOLODE Collaboration, Phys. Rev. Lett., 89, 085902, 2002.Google Scholar
14. Valenta, M. W. and Ramasastry, C., Phys. Rev. 106, 73 (1957).Google Scholar