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Arsenic diffusion in Si and Si0.9Ge0.1 alloys: Effect of defect injection

Published online by Cambridge University Press:  17 March 2011

Suresh Uppal ,
J. M. Bonar ,
Jing Zhang  and
A. F. W. Willoughby
Suresh Uppal
Affiliation:
Material Research Group, School of Engineering Sciences, 2BW, United Kingdom
J. M. Bonar
Affiliation:
School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, United Kingdom
Jing Zhang
Affiliation:
EXSS, Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BW, United Kingdom
A. F. W. Willoughby
Affiliation:
Material Research Group, School of Engineering Sciences, 2BW, United Kingdom
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Abstract

Results of intrinsic As diffusion in Si as well as in strained and relaxed Si0.9Ge0.1 layers are presented. Using Molecular Beam Epitaxy in-situ As doped epitaxial Si and compressively strained and relaxed Si-Ge layers were grown on Si substrates. The samples were annealed using Rapid Thermal Annealing (RTA) at 1000 °C. Arsenic diffusion is seen to be enhanced in SiGe than in Si. The enhancement factor is calculated to be 2.3 and 1.3 for relaxed and strained Si0.9Ge0.1, respectively. Also, using RTA in oxygen atmosphere, interstitial and vacancies were selectively injected in to the sample structures. Diffusion enhancement is also recorded in Si and Si-Ge structures with interstitial as well as vacancy injections over inert anneal. The results suggest that both interstitial and vacancy defects contribute to As diffusion in Si and Si0.9Ge0.1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B9.3.1/C9.3
Copyright
Copyright © Materials Research Society 2004

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