Symposium D – Compound Semiconductor Electronics and Photonics
Research Article
Cleaved Facets in Gan by Wafer Fusion of Gan to Inp
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- 10 February 2011, 165
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Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers
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- 10 February 2011, 171
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Studies of Degradation in Nichia AlGaN/InGaN/GaN Blue Light Emitting Diodes Under Close to Normal Operating Conditions
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- 10 February 2011, 183
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Photoluminescence Study of Chloride Vpe-Grown Gan
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- 10 February 2011, 189
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Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia
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- 10 February 2011, 195
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Comparison of N- And P-Type Ingaas/Inp Quantum Well Infrared Photodetectors
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- 10 February 2011, 203
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Ion Implantation For High Performance Ill-V Jfets And Hfets
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- 10 February 2011, 209
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Characterization of the Solid-Phase Epitaxial Growth of Amorphized Gaas with In-Situ Electron Microscopy
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- 10 February 2011, 221
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Complementary Hfet Technology for Low-Power Mixed-Mode Applications
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- 10 February 2011, 227
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Damage Introduction in Ingap and Aigaas by Electron Cyclotron Resonance ar Plasmas
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- 10 February 2011, 239
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Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2
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- 10 February 2011, 245
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Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3 /O2 Plasmas
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- 10 February 2011, 251
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Interactions at Metaijinp Interfaces Formed at 300K and 77K
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- 10 February 2011, 257
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Investigation of Deep-Level Defects in 10 Mev Electrons Irradiated Si-Gaas
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- 10 February 2011, 263
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A Study of Annealing Behavior of EL2 and EL6 Groups in SI-GaAs
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- 10 February 2011, 269
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The Electric Field Measuring by Phase Selective Photoreflectance
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- 10 February 2011, 275
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Growth and Characterization of GaAs Epitaxial Layers by MOCVD
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- 10 February 2011, 281
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Formation of New Semiconducting Ge-Si-Fe Alloy on Si(100) and its Optical Properties
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- 10 February 2011, 287
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A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy
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- 10 February 2011, 293
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Atomic Force Microscope Chemically Induced Direct Processing
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- 10 February 2011, 299
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