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Growth and Characterization of GaAs Epitaxial Layers by MOCVD

Published online by Cambridge University Press:  10 February 2011

Mantu Kumar Hudait ,
Prasanta Modak  and
S.B. Krupanidhi
Mantu Kumar Hudait
Affiliation:
Central Research Laboratory, Bharat Electronics, Bangalore-560 013 INDIA
Prasanta Modak
Affiliation:
Central Research Laboratory, Bharat Electronics, Bangalore-560 013 INDIA
S.B. Krupanidhi
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-560 012, India
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Abstract

technique, on both semi-insulating and semi-conducting CraAs substrates with (100) orientation, offset by 2° towards (110) direction. Systematic variation of As/Ga was performed to gain an understanding of growth process, type of formation and other related physical properties. The films were characterized by using the variety of techniques, such as SEM, EDAX, HRTEM, XRD, and PL. Optical and electrical properties of undoped CyaAs epilayers are presented with reference to the growth conditions and AsH3/TMGa ratio. Photoluminescence measurements of GaAs epilayers were recorded at 4.2K and shows the emission of free exciton and confirmed their high purity. The dominant residual impurities in GaAs are presented by using PL. Finally, electrochemical depth profiling exhibited almost homogeneous background carrier distribution and excellent abruptness between the thin GaAs epilayer and substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 281
Copyright
Copyright © Materials Research Society 1996

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