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The Electric Field Measuring by Phase Selective Photoreflectance

Published online by Cambridge University Press:  10 February 2011

J. S. Hwang ,
W. Y. Chou ,
S. L. Tyan ,
Y. C. Wang  and
H. Shen
J. S. Hwang
Affiliation:
National Cheng Kung University, Department of physics, Tainan, Taiwan.
W. Y. Chou
Affiliation:
National Cheng Kung University, Department of physics, Tainan, Taiwan.
S. L. Tyan
Affiliation:
National Cheng Kung University, Department of physics, Tainan, Taiwan.
Y. C. Wang
Affiliation:
National Cheng Kung University, Department of physics, Tainan, Taiwan.
H. Shen
Affiliation:
U.S. Army Research Laboratory, Physical Science Directorate, AMSRL-PS-PB, Fort Monmouth, New Jersey 07703–5601
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Abstract

The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and outphase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 275
Copyright
Copyright © Materials Research Society 1996

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