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Characterization of the Solid-Phase Epitaxial Growth of Amorphized Gaas with In-Situ Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

K. B. Belay ,
M. C. Ridgway  and
D. J. Llewellyn
K. B. Belay
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia.
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia.
D. J. Llewellyn
Affiliation:
Electron Microscope Unit, Research School of Biological Sciences, The Australian National University, Canberra, Australia.
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Abstract

The influence of non-stoichiometry on the solid-phase epitaxial growth of amorphized GaAs has been studied with in-situ Transmission Electron Microscopy (TEM). Ion-implantation has been used to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. It has been demonstrated that amorphous GaAs recrystallizes into a thin single-crystal layer and a thick heavily twinned layer. Video images of the recrystallization process have been quantified for the first time to study the velocity of the crystalline/amorphous (c/a)-interface as a function of depth and ion species. Regrowth rates of the single crystal and twinned layers as functions of non-stoichiometry have been calculated. The phase transformation is rapid in Ga-rich material. In-situ TEM results are consistent with conventional in-situ Time Resolved Reflectivity, ex-situ Rutherford Backscattering Spectroscopy and Channelling measurements and ex-situ TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 221
Copyright
Copyright © Materials Research Society 1996

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