Editorial
Preface
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- 19 April 2010, p. 1
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Original Article
AlGaN/GaN epitaxy and technology
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- 11 March 2010, pp. 3-11
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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation
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- 19 April 2010, pp. 13-20
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Industrial GaN FET technology
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- 11 March 2010, pp. 21-32
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Millimeter-wave GaN-based HEMT development at ETH-Zürich
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- 20 April 2010, pp. 33-38
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Reliability issues of Gallium Nitride High Electron Mobility Transistors
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- 23 March 2010, pp. 39-50
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GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project
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- 11 March 2010, pp. 51-61
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Large-signal modeling of large-size GaN HEMTs with a comprehensive extrinsic elements extraction algorithm
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- 23 March 2010, pp. 63-73
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Evaluation of GaN technology in Doherty power amplifier architectures
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- 11 March 2010, pp. 75-84
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GaN devices for communication applications: evolution of amplifier architectures
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- 19 April 2010, pp. 85-93
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AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective
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- 20 April 2010, pp. 95-104
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Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
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- 23 March 2010, pp. 105-114
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Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
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- 07 April 2010, pp. 115-120
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GaN for space application: almost ready for flight
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- 19 April 2010, pp. 121-133
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GaN-based amplifiers for wideband applications
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- 19 April 2010, pp. 135-141
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Front Cover (OFC, IFC) and matter
MRF volume 2 issue 1 Cover and Front matter
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- 29 April 2010, pp. f1-f2
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Back Cover (IBC, OBC) and matter
MRF volume 2 issue 1 Cover and Back matter
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- 29 April 2010, pp. b1-b2
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