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GaN-based amplifiers for wideband applications

Published online by Cambridge University Press:  19 April 2010

Patrick Schuh*
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Hardy Sledzik
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Rolf Reber
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Kristina Widmer
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Martin Oppermann
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Markus Mußer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: P. Schuh Email: [email protected]

Abstract

Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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