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Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Published online by Cambridge University Press:  07 April 2010

Jutta Kühn ,
Markus Musser ,
Friedbert van Raay ,
Rudolf Kiefer ,
Matthias Seelmann-Eggebert ,
Michael Mikulla ,
Rüdiger Quay ,
Thomas Rödle  and
Oliver Ambacher
Jutta Kühn*
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Markus Musser
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Friedbert van Raay
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Michael Mikulla
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Rüdiger Quay
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Thomas Rödle
Affiliation:
NXP Semiconductors – RF Power & Base Stations, Gerstweg 2 – Mailstop BY 2.016–6534 AE Nijmegen, The Netherlands.
Oliver Ambacher
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
*
Corresponding author: J. Kühn Email: [email protected]
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Abstract

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

Keywords

Gallium nitridePower amplifierPower-added efficiencyMMICBroadbandLNAMM-wave
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 115 - 120
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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