Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Tanvir Hasan, Md.
Tokuda, Hirokuni
and
Kuzuhara, Masaaki
2011.
Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures.
Applied Physics Letters,
Vol. 99,
Issue. 13,
Minj, Albert
Cavalcoli, Daniela
Pandey, Saurabh
Fraboni, Beatrice
Cavallini, Anna
Brazzini, Tommaso
and
Calle, Fernando
2012.
Nanocrack-induced leakage current in AlInN/AlN/GaN.
Scripta Materialia,
Vol. 66,
Issue. 6,
p.
327.
Kayis, Cemil
Ferreyra, Romualdo A.
Zhu, Congyong
Avrutin, Vitaliy
Özgür, Ümit
and
Morkoç, Hadis
2012.
The effect of barrier strain on the reliability of Inx Al1–xN/AlN/GaN heterostructure field‐effect transistors.
physica status solidi (RRL) – Rapid Research Letters,
Vol. 6,
Issue. 4,
p.
163.
Minj, A
Cavalcoli, D
and
Cavallini, A
2012.
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures.
Nanotechnology,
Vol. 23,
Issue. 11,
p.
115701.
Arslan, Engin
Turan, Sevil
Gökden, Sibel
Teke, Ali
and
Özbay, Ekmel
2013.
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures.
Thin Solid Films,
Vol. 548,
Issue. ,
p.
411.
Cavalcoli, Daniela
Minj, Albert
Pandey, Saurabh
Fraboni, Beatrice
and
Cavallini, Anna
2013.
Electrical Properties of Quantum Wells in III-NITRIDE Alloys and the Role of Defects.
MRS Proceedings,
Vol. 1617,
Issue. ,
p.
3.
Lugani, L.
Py, M. A.
Carlin, J.-F.
and
Grandjean, N.
2014.
Leakage mechanisms in InAlN based heterostructures.
Journal of Applied Physics,
Vol. 115,
Issue. 7,
Kaun, Stephen W
Ahmadi, Elaheh
Mazumder, Baishakhi
Wu, Feng
Kyle, Erin C H
Burke, Peter G
Mishra, Umesh K
and
Speck, James S
2014.
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy.
Semiconductor Science and Technology,
Vol. 29,
Issue. 4,
p.
045011.
Lachab, M
Sultana, M
Fareed, Q
Husna, F
Adivarahan, V
and
Khan, A
2014.
Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate.
Journal of Physics D: Applied Physics,
Vol. 47,
Issue. 13,
p.
135108.
Jiao, Wenyuan
Kong, Wei
Li, Jincheng
Collar, Kristen
Kim, Tong-Ho
Losurdo, Maria
and
Brown, April S.
2016.
The characteristics of MBE-grown InxAl1−xN/GaN surface states.
Applied Physics Letters,
Vol. 109,
Issue. 8,
Mahmud, Shoaib
Pathan, Tyafur Rahman
and
Khosru, Quazi D. M.
2017.
Quantum mechanical self consistent simulation and analytical modeling for C-V characterization of high-K gate AlInN/AlN/GaN MOS-HEMT structure featuring negative capacitance in AlInN layer.
p.
163.
Rahman, I. K. M. Reaz
Khan, Md. Irfan
and
Khosru, Quazi D. M.
2019.
A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT.
IEEE Transactions on Electron Devices,
Vol. 66,
Issue. 7,
p.
2923.
Beloufa, Abbes
Bouguenna, Driss
Kermas, Nawel
and
As, Donat Josef
2020.
A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.
Journal of Electronic Materials,
Vol. 49,
Issue. 3,
p.
2008.
Mohamed, Ahmed
Park, Kihoon
Bayram, Can
Dutta, Mitra
and
Stroscio, Michael A
2020.
Phonon-assisted reduction of hot spot temperature in AlInN ternaries.
Journal of Physics D: Applied Physics,
Vol. 53,
Issue. 36,
p.
365102.
Ambacher, O.
Christian, B.
Yassine, M.
Baeumler, M.
Leone, S.
and
Quay, R.
2021.
Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures.
Journal of Applied Physics,
Vol. 129,
Issue. 20,
Aguileta-Vazquez, R. R.
Liu, Z.
AlQatari, F.
Lu, Y.
Tang, X.
Miranda-Cortez, P. A.
and
Li, X.
2023.
Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes.
Journal of Applied Physics,
Vol. 134,
Issue. 18,
Shaban, Zeinab
Zubialevich, Vitaly Z
Amargianitakis, Emmanouil A
Atar, Fatih Bilge
Parbrook, Peter James
Li, Zhi
and
Corbett, Brian
2023.
InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release.
Semiconductor Science and Technology,
Vol. 38,
Issue. 5,
p.
055015.
Khan, Abdul Naim
Mishra, S. N.
Routray, S.
Chatterjee, Gaurav
and
Jena, K.
2023.
Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications.
Journal of Computational Electronics,
Vol. 22,
Issue. 3,
p.
827.