Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-22T07:16:14.831Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project

Published online by Cambridge University Press:  11 March 2010

Tibault Reveyrand ,
Walter Ciccognani ,
Giovanni Ghione ,
Olivier Jardel ,
Ernesto Limiti ,
Antonio Serino ,
Vittorio Camarchia ,
Federica Cappelluti  and
Raymond Quéré
Tibault Reveyrand*
Affiliation:
XLIM-C2S2, 123 Avenue Albert Thomas, Cedex Limoges 87060, France. Phone: +33 672 190 725; Fax: +33 555 45 76 66.
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, Rome 00133, Italy.
Giovanni Ghione
Affiliation:
Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
Olivier Jardel
Affiliation:
Alcatel – Thales III-V Lab, Route de Nozay, Marcoussis Cedex F-91461, France.
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, Rome 00133, Italy.
Antonio Serino
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, Rome 00133, Italy.
Vittorio Camarchia
Affiliation:
Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
Federica Cappelluti
Affiliation:
Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
Raymond Quéré
Affiliation:
XLIM-C2S2, 123 Avenue Albert Thomas, Cedex Limoges 87060, France. Phone: +33 672 190 725; Fax: +33 555 45 76 66.
*
Corresponding author: T. Reveyrand Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters).

Keywords

GaNTransistorNonlinear modelNoise modelLoad-pull measurementsPower amplifierTrapping effects
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 51 - 61
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Gauthier, G.; Mancuso, Y.; Murgadella, F.: KORRIGAN – a comprehensive initiative for GaN HEMT technology in Europe, in Gallium Arsenide and Other Semiconductor Application Symposium, 2005, 361–363.Google Scholar
[2]Teyssier, J.-P.; Bouysse, P.; Ouarch, Z.; Barataud, D.; Peyretaillade, T.; Quere, R.: 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization. IEEE Trans. Microwave Theory Tech., 46 (12) (1998), 2043–2052. doi: 10.1109/22.739281.CrossRefGoogle Scholar
[3]Piotrowicz, S.; et al. : State of the art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in Compound Semiconductor Integrated Circuits Symposium 2008, 2008. doi: 10.1109/CSICS.2008.39.CrossRefGoogle Scholar
[4]Camarchia, V.; Cappelluti, F.; Pirola, M.; Guerrieri, S.D.; Ghione, G.: Self-consistent electrothermal modeling of Class A, AB, and B power GaN HEMTs under modulated RF excitation. IEEE Trans. Microwave Theory Tech., 55 (9) (2007), 1824–1831. doi:10.1109/TMTT.2007.903839Google Scholar
[5]Bonani, F.; Camarchia, V.; Cappelluti, F.; Guerrieri, S.; Ghione, G.; Pirola, M.: When self-consistency makes a difference. IEEE Microwave Mag., 9 (5) (2008), 81–89. doi:10.1109/MMM.2008.927638Google Scholar
[6]Cappelluti, F.; Furno, M.; Angelini, A.; Bonani, F.; Pirola, M.; Ghione, G.: On the substrate thermal optimization in SiC-based backside-mounted high-power GaN FETs. IEEE Trans. Electron Dev., 54 (7) (2007), 1744–1752. doi: 10.1109/TED.2007.899380CrossRefGoogle Scholar
[7]Joyce, W.: Thermal resistance of heat sinks with temperature dependent conductivity. Solid-State Electron., 18 (4) (1975), 321–322. doi: 10.1016/0038-1101(75)90085-4CrossRefGoogle Scholar
[8]Jardel, O.; et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microwave Theory Tech., 55 (12) (2007), 2660–2662. doi: 10.1109/TMTT.2007.907141CrossRefGoogle Scholar
[9]Lane, R.Q.: The determination of device noise parameters. Proc. IEEE, 57 (8) (1969), 1461–1462.CrossRefGoogle Scholar
[10]Pucel, R.A.; Haus, H.A.; Statz, H.: Signal and noise properties of GaAs microwave FET. Adv. Electron. Electron Phys., 38 (1975), 195–265.Google Scholar
[11]Gupta, M.S.; Greiling, P.T.: Microwave noise characterisation of GaAs MESFET's: determination of extrinsic noise parameters. IEEE Trans. Microwave Theory Tech., 36 (4) (1988), 745–751. doi: 10.1109/22.3580.CrossRefGoogle Scholar
[12]Pospieszalski, M.W.: Modelling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence. IEEE Trans. Microwave Theory Tech., 37 (9) (1989), 1340–1350. doi: 10.1109/22.32217.Google Scholar
[13]Tasker, P.J.; Reinert, W.; Hughes, B.; Braunstein, J.; Schlechtweg, M.: Transistor noise parameter extraction using a 50 Ω measurement system, in IEEE MTT-S International Microwave Symposium Digest, 1993, 1251–1254. doi: 10.1109/MWSYM.1993.277100.CrossRefGoogle Scholar
[14]Krausse, D.; et al. : Robust GaN HEMT low-noise amplifier MMICs for X-Band applications, in Gallium Arsenide Applications Symposium, 2004, 71–74.Google Scholar
[15]Micovic, M.; et al. : GaN MMIC technology for microwave and millimeter-wave applications, in Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE, 2005. doi: 10.1109/CSICS.2005.1531801.Google Scholar