Several useful ceramic materials target compositions contain yttrium, Y2O3 and YBa2Cu3O7-δ being the two most widely employed. One known CVD precursor for yttrium-containing thin films is Y(tmhd)3 H2O (tmhd = 2,2,6,6-tetramethylheptane-3,5-dionato). We have determined the structure and examined the vapor phase decomposition of this species. A related compound, [Y(tmod)3]2(tmod = 2,2,7-trimethyloctane-3,5-dionato), has been prepared, structurally characterized, and studied as an organometallic vapor phase epitaxy (OMVPE) precursor for Y and Y2O3 films. Mechanisms of vapor phase decomposition are discussed in terms of solid film deposits and vapor phase by-products. The two precursors are compared to each other with respect to their stability windows, defined as being bound by source volatility on the low side and source stability on the high side.