The growth of Ga1-xMnxN and Ga1-xFexN nanostructures was carried out by MOCVD. Introduction of transition metals (TM) Mn and Fe in GaN nanostructures enhanced the nucleation of the nanostructures resulting in reduced lateral dimensions and increased nanostructure density. The Ga1-xMnxN nanostructures showed hysteresis behavior at 5K. Room temperature ferromagnetism was obtained in the Ga1-xFexN nanostructures unlike its bulk counterpart. This paper presents the growth and magnetization study of Ga1-xTMxN nanostructures. These structures could be used to enhance the efficiency of spintronic devices.

Self-assembled (SA) quantum dots (QDs) have been widely studied due to the facileness in their preparation. Unlike other types of QDs that require complicated fabrication processes, SA QDs are prepared merely by depositing materials that have different bandgaps and lattice constants to the with respect to the substrate by epitaxial crystal growth techniques. InAs QDs on GaAs(001) grown by MBE or MOCVD have been a typical example, and their optoelectronic properties have been extensively investigated. For device applications, it is essential that their size and spatial distribution are controlled. However, since SA QDs are formed through random processes, it is not easy to achieve size and distribution uniformity without prior processing the substrate prior to crystal growth. A number of studies have been performed to understand the fundamental mechanisms of SA QD formation that would provide us with information to achieve such goal.Here, we performed real-time observation of SA InAs QD growth on GaAs(001) by MBE. In contrast to most previous reports that employed growth interruption, by following the time transient of RHEED specular beam in detail, we obtained information about nucleation and evolution of the QDs, and have been able to distinguish processes that are dependent and independent of growth rate. In addition, the results reveal that surface migration of In/As atoms and their incorporation into QDs, with the aid of the wetting layer, can be observed. We will also provide a quantitative discussion on these processes.

p-i-n heterostructured quantum-dot electroluminescence (QD-EL) device was fabricated by soft-chemical process, which shows a low turn-on voltage comparable to OLEDs. To construct the multilayered device structure, p-type polymer semiconductor was deposited on the ITO glass by sequential process of coating and thermal curing, thereupon a few monolayers of QD was spin-coated. n-type metal-oxide film was deposited on top of the QD luminescence layer by sol-gel method, providing a facile and low-cost route for the ETL fabrication. Prior to solution-processed ETL construction, a post-treatment is performed using cross-linking agent, in order to chemically-immobilize the QDs. As a cathodic electrode, relatively air-stable aluminum was deposited. The constituent material as well as the electronic band structure of the integrated device guarantees operating stability in air and low turn-on voltage.

The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

A voltage-tunable two-color multiple quantum well infrared photodetector was fabricated with two bands at 6.0 and 10.3 ìm. The molecular beam epitaxy grown structure consists of two stacks of n-type InGaAs wells and GaAs/AlGaAs superlattice barriers. The 6.0 ìm band was found to be dominant at low bias voltages while the 10.3 ìm band is dominant at high bias voltages. The optical absorption measurements confirm the presence of both bands. Furthermore, the transfer matrix method is used to estimate the peak position energies of the intersubband transitions in the two stacks.

Self-assembled InAs quantum dot clusters (QDCs) and InGaAs QD molecules (QDMs) have been demonstrated through a growth technique called “droplet epitaxy” by molecular beam epitaxy (MBE). For QDCs, the size and density of QDs can be controlled with variation of InAs monolayer coverages. For QDMs, Ga contribution from GaAs mound with the interaction of InAs deposition resulted in various number of InGaAs QDs per GaAs mound, ranging from 2 to 6 (bi-QDMs to hexa-QDMs) depending on the specific InAs monolayer deposition. High step density on sidewall of GaAs mound and anisotropy of surface diffusion gave a rise to preferential formation of InAs and InGaAs QDs around GaAs mounds. This hybrid growth approach combining droplet epitaxy and typical QD growth is relatively simple and flexible and doesn't require further ex-situ surface preparation. This approach of QD arrangement can find applications in optoelectronics as well as physical study of QD interaction.

An atomistic modelling based on density functional theory within the framework of the local density approximation is used to show the trends in the energetic properties of single and double defects in CdTe semiconductor, without phase transformation. A systematic study of vacancies, Mn substituting Cd atoms in a supercell structure consisting of 16-atoms is presented. The changes of structural properties and lattice parameters due to the addition of Mn-atomic type defects in CdTe matrix are compared, and the number of vacancies is also determined from the total energy calculations.

We theoretically analyze three models, which correspond to three different ways of the elastic energy relaxation in buried quantum dots. The first model considers formation of a pair of prismatic dislocation loops. One of them lies on dot/matrix interface, whereas the other is a satellite and locates in the adjacent matrix. The second model also includes the satellite loop and differs from the first one by non-local reduction of the dot plastic distortion. The origin of the satellite loop is the materials conservation requirement. The third model considers the case when this requirement is violated and only the misfit dislocation loop is formed. We determine the critical radii of the dots and loops, as well as the dependence of the satellite loop size on the dot size. The model calculation are compared to the relevant experimental data.

We report on the synthesis and microstructural and microanalytical analysis of dodecanethiol and benzylthiol-stabilized Au nanoparticles (diameter range between 2 nm and 10 nm). Stable functionalized gold nanoparticles were synthesized by using two different routes: a two-phase liquid-liquid method and a one-phase method. The size, strain, shape and crystalline structure of the nanocrystals were determined by a full-pattern X-ray powder diffraction analysis and high-resolution electron microscopy. The chemical environment of the Au nanocrystals and their interaction with the thiols was investigated by X-ray photoelectron spectroscopy. Photoluminescence spectroscopy measurements show a characteristic IR emission at λ=960 nm of small sized Au nanocrystals (∼3 nm). The origin of this IR emission line seems to be correlated to the Au-S bonding and the size of the nanoparticles.

The electronic coupling to the longitudinal optical phonons has been recently used to interpret theoretically the electronic energy relaxation in quantum dots. In this theory the LO phonon modes served as a reservoir, on which the electron executes multiple scattering acts. Quite reasonably such a phonon subsystem is expected to be passive, namely, in a long-time limit of development, the whole system should be able to achieve such a stationary state, in which the statistical distributions of both subsystems, electron and phonons, do not change in time. We remind briefly that the recent approach to the relaxation in quantum dots has led to a non-passivity of such a reservoir. We remind as well the method of a partial elimination of the phonon overheating effect by using the Lang-Firsov transformation. Then we apply such a modified relaxation theory to the electronic relaxation at low electronic densities in quantum dots and come to conclusions concerning the role of e-LO scattering mechanism. We show that the modified theory of relaxation gives a plausible dependence of relaxation rate on temperature of sample. We also come to conclusions that at low levels of electronic excitation of quantum dot sample the electron-LO phonon mechanism can become relatively weak with respect to other relaxation mechanisms not supporting the electronic up-conversion effect.

Optical absorption and photoluminescence techniques were used to investigate the band gap of colloidal CdSe/ZnS core/shell nanocrystals matrixed in a UV curable resin. The band gap was measured for several nanocrystals with size ranging between 1.9 and 4.0 nm. The band gap (Eg) was determined from the first exciton peaks observed in the optical absorption spectra. Both Debye and Einstein temperatures were estimated from fitting the energy band gap vs. temperature using two different empirical expressions.

Structures of tunnel-coupled pairs consisting of InGaAs (In composition was varied from 29 to 36%) quantum wells (QW) grown on top of shape-engineered self-assembled InAs quantum dots (QW-on-QDs) were employed to increase the maximum saturated gain of QD-based laser active medium. Room temperature optical properties of tunnel-coupled well-on-dots structures at low excitation were found to be sensitive to energy separation between GS energies of QDs and QW. The spectra also show that QD-related photoluminescence (PL) tends to peak at discrete energy separations from the QW peak, in this case multiples of ∼ 35meV (LO phonon energy). The optimized GS energy separation between QW and QDs was found to be close to the energy of the LO phonon. This structure demonstrated narrowing of the QD PL line down to 21.6 meV at T=77K, indicating efficient resonant tunneling of carriers from QW into QD ensemble states. All-epitaxial vertical cavity surface emitting lasers (VCSELs) with triple-pair tunnel QW-on-QDs as active medium demonstrated continuous wave mode lasing. Tunnel QDs-QW VCSELs exhibited 1.8 mA (Jth ∼ 800 A/cm2) minimum threshold current at QD GS emission wavelength, 1135 nm, with 0.7mW optical power and 12% light-current efficiency.

A novel spray-based technique enables the production of high quality, free, uncoated semiconductor nanocrystals. Their collection, following spray droplet desolvation during flight, could result in unusual structures. We report on spray-produced ordered clusters (∼50nm diameter) of MnS nanocrystals with grain size range of 1-2nm, and their assembly into micron-sized coral-shaped fractal aggregates. Ballistic cluster-particle aggregation, with the introduction of physical interaction between particles, is suggested as a model for the assemblies' growth.

Fluorescence intermittency, or “blinking” in quantum dot systems has been the subject of great interest since the first observation of this phenomenon nearly 10 years ago. The stability of quantum dot fluorescence emission is especially important in the context of photovoltaic, optoelectronic, and biological applications, where device performance, or the ability to track labeled particles, is affected adversely by fluorescence intermittency. Single-molecule spectroscopy combined with atomic force microscopy measurements reveal that CdSe quantum dots functionalized with oligo(phenylene vinylene), OPV, ligands exhibit modified optical properties such as suppression of blinking when compared to conventional TOPO covered or ZnS-capped CdSe quantum dots. The blinking suppression is shown to be highly sensitive to the degree of ligand coverage on the quantum dot surface and this effect is interpreted as resulting from charge transport from photoexcited OPV into vacant trap sites on the quantum dot surface. This direct surface derivatization of quantum dots with organic ligands also enables a “tunable” quantum dot surface that allows dispersion of quantum dots in a variety of polymer supported thin films without phase segregation. This facilitates straightforward inclusion of these new hybrid materials into solid state formats and suggests exciting new applications of composite quantum dot/organic systems in optoelectronic systems.

We have developed a selective-area-growth (SAG) method of self-assembled InAs quantum dots (QDs) using a metal-mask (MM) combined with molecular beam epitaxy for realizing photonic crystal (PC) based ultra-small and ultra-fast all-optical devices (PC-SMZ and PC-FF). Successful SAG of QDs was confirmed by atomic-force-microscopy observations and photoluminescence (PL) measurements. High density and high uniformity comparable to those of conventional QDs grown without the MM were achieved; the QD density was 4 × 1010cm-2 and a linewidth of the PL peak was around 30meV at room temperature. In addition, insertion of a strain-reducing layer on the grown QD was effective for varying the PL peak wavelength of the QD from 1240nm to 1320nm without any extra optical degradation. The MM method reported here is promising for achieving the all optical devices, PC-SMZ and PC-FF, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.

This work reports on the structural characterization of Au nanocrystals directly prepared on the surface of (100)Si and 150 nm-thick SiO2 deposited (100)Si substrates, by a physical self-assembly method, consisting in the UHV evaporation of a thin Au film and its successive high temperature annealing. The morphology, orientation, and crystalline structure of Au nanocrystals were characterized by scanning and high-resolution transmission electron microscopy and X-ray diffraction, respectively. Experimental results show that the nature of the substrate strongly influences the process of Au nanocrystal formation upon heat treatment, by affecting the interaction of deposited Au with the underlying material. In the case of clean (100)Si substrates the Au strongly interacts with Si, so that Au nanoislands are obtained with a well defined epitaxial relationships with the substrate, i.e. [100]AuÐÐ[110]Si and [110]AuÐÐ[311]Si. The nanoisland shape is affected by faceting at the Au/Si interface, the Au nanocrystal being limited by the {111}, {311}, {711} and {-111} planes of Si. In the case of SiO2/(100)Si substrates spherical shaped Au nanoparticles with random crystal orientation are instead, produced.

In this research, interband and intersubband optical properties of heavily doped n-type CdSe quantum dots were investigated by temperature dependent photoluminescence (PL) spectroscopy, picosecond time-resolved PL spectroscopy and Fourier transform infrared (FTIR) spectroscopy. Two doped and one undoped CdSe quantum dot samples with multiple QD layers were grown over ZnCdMgSe barrier layers on InP (001) substrate by molecular beam epitaxy. Heavy doping leads to decreasing of activation energy of nonradiative recombination centers, however, does not affect the luminescence efficiency of doped quantum wells. Time resolved PL experiments show that the PL decay times of the doped samples have weak dependence on well width and are much longer than that of the undoped sample. The two doped CdSe QD samples show strong Intersubband IR absorption that peaked at 2.54 μm, 2.69 μm and 3.51 μm. The ISB absorption is found to be strongly polarization dependent due to the large size of the QDs.

The scaling and ordering of metallic nanoclusters on semiconductor substrates has been explored computationally. Numerical techniques were implemented to calculate the total electrostatic and van der Waals energies for systems containing multiple disks. Observations show that interactions in charge clouds beneath the metallic disks led to an electrostatic repulsive force. Attraction was observed due to the van der Waals energy. An energy barrier exists for disk coalescence. This work suggests the potential of double layer charges in the development of large-scale nanodot systems that require precise control over both dot location and size.

Multipolar interactions between quantum dots involving real and virtual photons are compared on the basis of our (micro-photoluminescence) spectra of coupled QDs (quantum dots), and suggested as the principle of intra-device, inter-device, and inter-chip interconnections and logical operations, with the device concepts for solid state nanometer networks and a quantum computer.

Water-soluble PbSe semiconductor quantum dots (QDs) with near-infrared absorption of 1100-2520 nm (corresponding to a diameter of 3-13 nm) were synthesized using 2-aminoethanthiol. The oleic acid stabilizing ligands used in the traditional synthesis of PbSe were exchanged with the 2-aminoethanethiol (AET) ligands, which promoted the solubilization of the QDs in an aqueous medium. This occurred due to the attraction of the surrounding water molecules to the exposed amino-group, thus allowing the particles to reside in the water environment. The water-soluble PbSe QDs have very narrow size distribution (σ ≈ 4.5-5.5%). Transmission electron microscopy (TEM), spectrophotometric measurements, and Fourier transform infrared (FTIR) spectroscopy indicate that the morphology, size, size distribution and chemical composition of the PbSe QDs remained unchanged during the transfer to an aqueous medium. In conclusion, the ability to synthesize water soluble PbSe QDs with stable properties and uniform size distribution will allow them to have substantial advantages for biological applications such as biosensors and drug delivery.