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Selective-Area Growth of Self-Assembled InAs-QDs by Metal Mask Method for Optical Integrated Circuit Applications

Published online by Cambridge University Press:  01 February 2011

Nobuhiko Ozaki ,
Yoshiaki Takata ,
Shunsuke Ohkouchi ,
Yoshimasa Sugimoto ,
Naoki Ikeda ,
Yoshinori Watanabe ,
Yoshinori Kitagawa ,
Akio Mizutani  and
Kiyoshi Asakawa
Nobuhiko Ozaki
Affiliation:
[email protected], University of Tsukuba, Center for TARA, Tennoudai 1-1-1, Tsukuba, 305-8577, Japan, +81-29-853-7387
Yoshiaki Takata
Affiliation:
[email protected], University of Tsukuba, Center for Tsukuba Advanced Research Alliance (TARA), 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8577, Japan
Shunsuke Ohkouchi
Affiliation:
[email protected], NEC Corporation, Fundamental and Environmental Research Laboratories, 34, Miyukigaoka, Tsukuba, Ibaraki, 305-8501, Japan
Yoshimasa Sugimoto
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Ultrafast Photonic Devices Laboratory, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Naoki Ikeda
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Ultrafast Photonic Devices Laboratory, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Yoshinori Watanabe
Affiliation:
[email protected], University of Tsukuba, Center for Tsukuba Advanced Research Alliance (TARA), 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8577, Japan
Yoshinori Kitagawa
Affiliation:
[email protected], University of Tsukuba, Center for Tsukuba Advanced Research Alliance (TARA), 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8577, Japan
Akio Mizutani
Affiliation:
[email protected], University of Tsukuba, Center for Tsukuba Advanced Research Alliance (TARA), 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8577, Japan
Kiyoshi Asakawa
Affiliation:
[email protected], University of Tsukuba, Center for Tsukuba Advanced Research Alliance (TARA), 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8577, Japan
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Abstract

We have developed a selective-area-growth (SAG) method of self-assembled InAs quantum dots (QDs) using a metal-mask (MM) combined with molecular beam epitaxy for realizing photonic crystal (PC) based ultra-small and ultra-fast all-optical devices (PC-SMZ and PC-FF). Successful SAG of QDs was confirmed by atomic-force-microscopy observations and photoluminescence (PL) measurements. High density and high uniformity comparable to those of conventional QDs grown without the MM were achieved; the QD density was 4 × 1010cm-2 and a linewidth of the PL peak was around 30meV at room temperature. In addition, insertion of a strain-reducing layer on the grown QD was effective for varying the PL peak wavelength of the QD from 1240nm to 1320nm without any extra optical degradation. The MM method reported here is promising for achieving the all optical devices, PC-SMZ and PC-FF, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.

Keywords

molecular beam epitaxy (MBE)nanostructureself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M17-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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