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Guided Self Assembly of InAs Quantum Dots on a Cleaved Facet

Published online by Cambridge University Press:  01 February 2011

Emanuele Uccelli ,
Dieter Schuh ,
Jochen Bauer ,
Max Bichler ,
Jonathan J. Finley ,
Matthew Grayson ,
Gerhard Abstreiter  and
Anna Fontcuberta i Morral
Emanuele Uccelli
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany, +49 89 289 12756, +49 89 320 6620
Dieter Schuh
Affiliation:
[email protected], Universität Regensburg, Institut für Angewandte und Experimentelle Physik II, Regensburg, 93040, Germany
Jochen Bauer
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Max Bichler
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Jonathan J. Finley
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Matthew Grayson
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Gerhard Abstreiter
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Anna Fontcuberta i Morral
Affiliation:
[email protected], Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
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Abstract

The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

Keywords

molecular beam epitaxy (MBE)III-Vself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M16-02
Copyright
Copyright © Materials Research Society 2007

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References

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