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Soft-chemistry Route to P-I-N Heterostructured Quantum Dot Electroluminescence Device: All Solution-processed Polymer-Inorganic Hybrid QD-EL Device

Published online by Cambridge University Press:  01 February 2011

Soon-Jae Kwon ,
Kyung-Sang Cho ,
Byoung-Lyong Choi  and
Byung-Ki Kim
Soon-Jae Kwon
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of, +82-31-280-9383, +82-31-280-9349
Kyung-Sang Cho
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of
Byoung-Lyong Choi
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of
Byung-Ki Kim
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of
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Abstract

p-i-n heterostructured quantum-dot electroluminescence (QD-EL) device was fabricated by soft-chemical process, which shows a low turn-on voltage comparable to OLEDs. To construct the multilayered device structure, p-type polymer semiconductor was deposited on the ITO glass by sequential process of coating and thermal curing, thereupon a few monolayers of QD was spin-coated. n-type metal-oxide film was deposited on top of the QD luminescence layer by sol-gel method, providing a facile and low-cost route for the ETL fabrication. Prior to solution-processed ETL construction, a post-treatment is performed using cross-linking agent, in order to chemically-immobilize the QDs. As a cathodic electrode, relatively air-stable aluminum was deposited. The constituent material as well as the electronic band structure of the integrated device guarantees operating stability in air and low turn-on voltage.

Keywords

devicescore/shellluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M04-05
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Tang, C. W. and VanSlyke, S. A., Appl. Phys. Lett. 51, 913 (1987).Google Scholar
2. Fujihira, M., Do, L. M., Koike, A., and Han, E. M., Phys. Lett. 68, 1787 (1996).Google Scholar
3. Coe, S., Woo, W. K., Bawendi, M., and Vulovic, V., Nature 420, 800 (2002).Google Scholar
4. Mueller, A. H., Petruska, M. A., Archermann, M., Werder, D. J., Akhadov, E. A., Koleske, D. D., Hoffbauer, M. A., and Klimov, V. I., Nano Lett. 5, 1039 (2005).Google Scholar
5. Korean Patent Application No. 10-2006-0015159 (2006)Google Scholar
6. Caruge, J. M., Halpert, J. E., Bulovic, V., and Bawendi, M. G., Nano Lett. 6, 2991 (2006)Google Scholar