Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications
Research Article
Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films
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- 01 February 2011, 0917-E10-03
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Chemical Vapor Deposition of ZrxTi1-xO and HfxTi1-xO Thin Films Using the Composite Anhydrous Nitrate Precursors
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- 01 February 2011, 0917-E05-13
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Correlation of Phase Segregation and Electrical Properties of Low-Power MOSFETs with Hf-based Silicate Gate Dielectric Layers and TaN Metal Gates
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- 01 February 2011, 0917-E07-04
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Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon
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- 01 February 2011, 0917-E10-04
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Ru/Ta Alloying Behavior and its Implications for Laminate Based CMOS Integration
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- 01 February 2011, 0917-E08-04
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The Development of Zero-temperature-gradient Zero-bias Thermally Stimulated Current (ZTGZBTSC) Spectroscopy Technique for the Detection of Defect States in Ultra-thin High-k Dielectric Films
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- 01 February 2011, 0917-E05-18
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Impact of TiN/HfO2 Integration on Carrier Mobility
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- 01 February 2011, 0917-E04-04
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Silicate Formation at the Interface of high-k dielectrics and Si(001) Surfaces
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- 01 February 2011, 0917-E10-02
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Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications
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- 01 February 2011, 0917-E11-04
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In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge
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- 01 February 2011, 0917-E09-03
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A Comparison of Electrical and Physical Properties of MOCVD Hafnium Silicate Thin Films Deposited using Various Silicon Precursors
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- 01 February 2011, 0917-E07-03
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Surface Preparation Techniques for the Atomic Layer Deposition of Hafnium Oxide
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- 01 February 2011, 0917-E10-05
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Metal Transport and Loss in Hafnium and Lanthanum Aluminate Films on Si Hampered by Thermal Nitridation
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- 01 February 2011, 0917-E05-17
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Metal Electrodes Work Function Measurement at Deca-Nanometer Scale using Kelvin Probe Force Microscope: a Step Forward to the Comprehension of Deposition Techniques Impact on Devices Electrical Properties
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- 01 February 2011, 0917-E12-04
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Area Selective Atomic Layer Deposition by Soft Lithography
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- 01 February 2011, 0917-E11-05
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A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics
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- 01 February 2011, 0917-E04-05
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Study of Magnetron Sputter Deposition of Metal Gate Electrodes
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- 01 February 2011, 0917-E12-05
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Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)
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- 01 February 2011, 0917-E02-06
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Characterization of HfO2/Si Exposed to Water Vapor at Room Temperature
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- 01 February 2011, 0917-E11-02
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Investigation of NBTI Recovery During Measurement
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- 01 February 2011, 0917-E03-02
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