Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-23T20:56:16.919Z Has data issue: false hasContentIssue false

Silicate Formation at the Interface of high-k dielectrics and Si(001) Surfaces

Published online by Cambridge University Press:  01 February 2011

Dieter Schmeisser
Affiliation:
[email protected] CottbusCottbus N/A 03046Germany
F. Zheng
Affiliation:
[email protected], University of Wisconsin, Madison, 53706-1390, United States
F.J. Himpsel
Affiliation:
[email protected], Univsersity of Wisconsin, Madison, 53706-1390, United States
H.J. Engelmann
Affiliation:
[email protected], AMD Saxony, Wilschdorfer Landstrasse 202, Dresden, N/A, D-01109, Germany
Get access

Abstract

The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used SR based photoelectron spectroscopies and, in particular, X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Hf-oxide prepared by ALD and compare to Pr2O3 / Si(001), and compare the two to the SiO2 / Si(001) system as a reference. For both, Hf-oxide and Pr-oxide thin films we find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wilk, G.D.. Wallace, R.M., Anthony, J.M., J.Appl.Phys. 89 (2001) 5243; R.M.C.Almeida, I.J.R.Baimvol, Surf.Sci.Rep.49 2003) 1.Google Scholar
2 Schmeißer, D., Materials Science in Semiconductor Processing 6 (2003)59.Google Scholar
3 Schmeißer, D., Zheng, F., Perez-Dieste, V., Himpsel, F. J., LoNigro, R., Toro, R. G., Malandrino, G., Fragalà, I. L., Materials Science and Engineering C (2005), in press.Google Scholar
4 Stöhr, J. NEXAFS Spectroscopy, Springer Verlag, Heidelberg (1996).Google Scholar
5 Schmeißer, D., Hoffmann, P., Beuckert, G., in Zschech, E., Whelan, C., Mikolajick, T. (Eds.): Materials for Information Technology, Devices, Interconnects and Packaging, Series: Engineering Materials and Processes, pp. 449460, Springer (2005).Google Scholar
6 Luk, Y.-Y., Abbott, N.L., Crain, J.N., Himpsel, F.J., Journal of Chemical Physics 120 (2004) 10792.Google Scholar
7 PerezDieste, V., Crain, J.N., Kirakosian, A., McChesney, J.L., Arenholz, E., Young, A.T., Denlinger, J.D., Ederer, D.L., Callcott, T.A., Lopez-Rivera, S.A., Physical Review B 70 (2004) 085205.Google Scholar
8 Schmeißer, D., Zheng, F., Himpsel, F.J., Zschech, E., to be published.Google Scholar
9 Schmeißer, D., Müssig, H.-J., Materials Science in Semiconductor Processing 7/4–6 (2004) 221.Google Scholar
10 Schmeißer, D., Müssig, H.-J., J.Physics: Condensed Matter 16 (2004) S153.Google Scholar
11 Schmeißer, D., Müssig, H.-J., MRS, Volume 811, in press.Google Scholar
12 Schmeißer, D., G.Lupina, Müssig, H.-J., Materials Science in Semic. Processing, submitted.Google Scholar
13 Schmeißer, D., Müssig, H.-J., American Institute of Physics (AIP), submitted.Google Scholar