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Characterization of HfO2/Si Exposed to Water Vapor at Room Temperature

Published online by Cambridge University Press:  01 February 2011

Carlos Driemeier ,
Elizandra Martinazzi ,
Israel J. R. Baumvol  and
Evgeni Gusev
Carlos Driemeier
Affiliation:
[email protected], Universidade Federal do Rio Grande do Sul, Instituto de Fisica, Av. Bento Gonçalves 9500, Caixa Postal 15051, Porto Alegre, Rio Grande do Sul, 91501-970, Brazil, 55-51-3316-6485
Elizandra Martinazzi
Affiliation:
[email protected], UFRGS, Porto Alegre, Rio Grande do Sul, 91501-970, Brazil
Israel J. R. Baumvol
Affiliation:
[email protected], UCS, Caxias do Sul, Rio Grande do Sul, 95070-560, Brazil
Evgeni Gusev
Affiliation:
[email protected], IBM Research Division, T. J. Watson Research Center, Yorktown Hights, New York, 10598, United States
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Abstract

HfO2-based materials are the leading candidates to replace SiO2 as the gate dielectric in Si-based metal-oxide-semiconductor filed-effect transistors. The ubiquitous presence of water vapor in the environments to which the dielectric films are exposed (e.g. in environmental air) leads to questions about how water could affect the properties of the dielectric/Si structures. In order to investigate this topic, HfO2/SiO2/Si(001) thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i) the formation of strongly bonded hydroxyls at the HfO2 surface; ii) room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii) hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.

Keywords

adsorptionHfdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E11-02
Copyright
Copyright © Materials Research Society 2006

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References

[1] International Technology Roadmap for Semiconductors (Semiconductor Industry Association, 2005 – available on-line at http://public.itrs.net).Google Scholar
[2] High-kgate dielectrics edited by Houssa, M. (Institute of Physics, London, 2004).Google Scholar
[3] Wilk, G. D., Wallace, R. M., and Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).Google Scholar
[4] Mrstik, B. J. and Rendell, R. W., IEEE Trans. Nucl. Sci. 38, 1101 (1991).Google Scholar
[5] Houssa, M., Afanas, V. V.'ev, Stesmans, A., and Heyns, M. M., Appl. Phys. Lett. 77, 1885 (2000).Google Scholar
[6] Kang, J., E. –C. Lee, Chang, K. J., and Jin, Y. –G., Appl. Phys. Lett. 84, 3894 (2004).Google Scholar
[7] Sayan, S., Aravamudhan, S., Busch, B. W., Schulte, W. H., Wilk, G. D., Cosandey, F., and Garfunkel, E. L., J. Vac. Sci. Tech. A 20, 507 (2002).Google Scholar
[8] Kim, H., McIntyre, P. C., and Saraswat, K. C., Appl. Phys. Lett. 82, 106 (2003).Google Scholar
[9] Baumvol, I. J. R, Stedile, F. C., Radtke, C., Freire, F. L. Jr, Gusev, E., Green, M. L., and Brasen, D., Nucl. Instr. Meth. Phys. Res. B. 137, 204 (1998).Google Scholar
[10] Amsel, G., Nadai, J. P., D'Artemare, E., David, D., Girard, E., and Moulin, J., Nucl. Instr. Meth. 92, 481 (1971).Google Scholar
[11] Driemeier, C., Miotti, L., Baumvol, I. J. R, Radtke, C., Gusev, E. P., Kim, M. J., and Wallace, R. M., Appl. Phys. Lett. 88, 041918 (2006).Google Scholar
[12] Barreca, D., Battiston, G. A., Gerbasi, R., and Tondello, E. Surf. Sci. Spec. 7, 303 (2000).Google Scholar
[13] Henderson, M. A., Surf. Sci. Rep. 46, 1 (2002).Google Scholar
[14] Maurel, B., Amsel, G., and Nadai, J. P., Nucl. Instr. Meth. Phys. Res. 197, 1 (1982).Google Scholar
[15] Baumvol, I. J. R, Surf. Sci. Rep. 36, 1 (1999).Google Scholar
[16] Almeida, R. M. C. de and Baumvol, I. J. R, Surf. Sci. Rep. 49, 1 (2003).Google Scholar
[17] Copel, M. and Reute, M. C., Appl. Phys. Lett. 83, 3398 (2003).Google Scholar
[18] Scopel, W. L., Silva, A. J. R. da, Orellana, W., and Fazzio, A., Appl. Phys. Lett. 84, 1492 (2004).Google Scholar