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Chemical Vapor Deposition of ZrxTi1-xO and HfxTi1-xO Thin Films Using the Composite Anhydrous Nitrate Precursors

Published online by Cambridge University Press:  01 February 2011

Qi-Yue Shao ,
Ai-Dong Li ,
Wen-Qi Zhang ,
Di Wu ,
Zhi-Guo Liu  and
Nai-Ben Ming
Qi-Yue Shao
Affiliation:
[email protected] UniversityNational Laboratory of Solid State Microstructures, Materials Science and Engineering DepartmentNanjing Jiangsu 210093China, People's Republic of
Ai-Dong Li
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Wen-Qi Zhang
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Di Wu
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Zhi-Guo Liu
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Physics Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Nai-Ben Ming
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Physics Department, Nanjing, Jiangsu, 210093, China, People's Republic of
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Abstract

Zr/Ti an Hf/Ti composite nitrate were developed as single-source precursors for deposition of multi-component metal oxide films. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) analyses confirmed that ZrxTi1-xO2 and HfxTi1-xO2 films were successfully prepared by the CVD technique from these composite precursors. The Zr/Ti nitrate can be taken as a solid solution of the individual Zr and Ti nitrate, and the Zr/Ti molar ratio in as-deposited ZrxTi1-xO2 films is nicely consistent with that of the precursor. The Hf/Ti nitrate appears to be a mixture of the Zr and Ti nitrates and the composition of the as-deposited HfxTi1-xO2 films depends remarkably on the heating time of precursor. Both ZrxTi1-xO2 and HfxTi1-xO2 films exhibit trading-off properties between band gap and dielectric constant, which suggesting that ZrxTi1-xO2 and HfxTi1-xO2 can be the promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the next generation complementary metal-oxide-semiconductor transistor (CMOS) devices.

Keywords

chemical vapor deposition (CVD) (deposition)dielectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-13
Copyright
Copyright © Materials Research Society 2006

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