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Chemical Vapor Deposition of ZrxTi1-xO and HfxTi1-xO Thin Films Using the Composite Anhydrous Nitrate Precursors

Published online by Cambridge University Press:  01 February 2011

Qi-Yue Shao ,
Ai-Dong Li ,
Wen-Qi Zhang ,
Di Wu ,
Zhi-Guo Liu  and
Nai-Ben Ming
Qi-Yue Shao
Affiliation:
[email protected] UniversityNational Laboratory of Solid State Microstructures, Materials Science and Engineering DepartmentNanjing Jiangsu 210093China, People's Republic of
Ai-Dong Li
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Wen-Qi Zhang
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Di Wu
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Zhi-Guo Liu
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Physics Department, Nanjing, Jiangsu, 210093, China, People's Republic of
Nai-Ben Ming
Affiliation:
[email protected], Nanjing University, National Laboratory of Solid State Microstructures, Physics Department, Nanjing, Jiangsu, 210093, China, People's Republic of
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Abstract

Zr/Ti an Hf/Ti composite nitrate were developed as single-source precursors for deposition of multi-component metal oxide films. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) analyses confirmed that ZrxTi1-xO2 and HfxTi1-xO2 films were successfully prepared by the CVD technique from these composite precursors. The Zr/Ti nitrate can be taken as a solid solution of the individual Zr and Ti nitrate, and the Zr/Ti molar ratio in as-deposited ZrxTi1-xO2 films is nicely consistent with that of the precursor. The Hf/Ti nitrate appears to be a mixture of the Zr and Ti nitrates and the composition of the as-deposited HfxTi1-xO2 films depends remarkably on the heating time of precursor. Both ZrxTi1-xO2 and HfxTi1-xO2 films exhibit trading-off properties between band gap and dielectric constant, which suggesting that ZrxTi1-xO2 and HfxTi1-xO2 can be the promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the next generation complementary metal-oxide-semiconductor transistor (CMOS) devices.

Keywords

chemical vapor deposition (CVD) (deposition)dielectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-13
Copyright
Copyright © Materials Research Society 2006

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References

[1] Wilk, G. D., Wallace, R. M., and Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).Google Scholar
[2] Qiu, X. Y., Liu, H. W., Fang, F., Ha, M. J., and Liu, J. M., Appl. Phys. Lett. 88, 072906 (2006).Google Scholar
[3] Wilk, G. D. and Wallace, R. M., Appl. Phys. Lett. 76, 112 (2000).Google Scholar
[4] Auciello, O., Fan, W., Kabius, B., Saha, S., Carlisle, J. A., Chang, R. P. H., Lopez, C., Irene, E. A., and Baragiola, R. A., Appl. Phys. Lett. 86, 042904 (2005).Google Scholar
[5] Rahtu, A., Ritala, M., and Leskela, M., Chem. Mater. 13, 1528 (2001).Google Scholar
[6] Triyoso, D. H., Hegde, R. I., Zollner, S., Ramon, M. E., Kalpat, S., Gregory, R., Wang, X. D., Jiang, J., Raymond, M., Rai, R., Werho, D., Roan, D., White, B. E. Jr, and Tobin, P. J., J. Appl. Phys. 98, 054104 (2005).Google Scholar
[7] Gilmer, D. C., Colombo, D. G., Taylor, C. J., Roberts, J., Haugstad, G., Campbell, S. A., Kim, H., Wilk, G. D., Gribelyuk, M. A., and Gladfelter, W. L., Chem. Vap. Deposition 4, 9 (1998).Google Scholar
[8] Zhong, L. J., Chen, F., Campbell, S. A., and Gladfelter, W. L., Chem. Mater. 16, 1098 (2004).Google Scholar
[9] Conley, J. F. Jr,.,Ono, Y., Tweet, D. J., Zhuang, W., and Solanki, R., J. Appl. Phys. 93, 712 (2003).Google Scholar
[10] Field, B. O. and Hardy, C. J., J. Chem. Soc., 4428 (1964).Google Scholar
[11] Field, B. O. and Hardy, C. J., J. Chem. Soc., 5278 (1963).Google Scholar
[12] Zhuang, W. W., Conley, J. F., Ono, Y., Evans, D. R., and Solanki, R., Integrated Ferroelectrics 48, 3 (2002).Google Scholar
[13] Li, A. D., Shao, Q. Y., Ling, H. Q., Cheng, J. B., Wu, D., Liu, Z. G., Ming, N. B., Wang, C., Zhou, H. W., Nguyen, B.Y., Appl. Phys. Lett. 83, 3540 (2003).Google Scholar
[14] Shao, Q. Y., Li, A. D., Zhang, W. Q., Wu, D., Liu, Z. G. and Ming, N. B. (submitted).Google Scholar