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Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon

Published online by Cambridge University Press:  01 February 2011

H. Joerg Osten ,
Malte Czernohorsky ,
Eberhard Bugiel ,
Dirk Kuehne  and
Andreas Fissel
H. Joerg Osten
Affiliation:
[email protected], University of Hannover, Institute of Electronic Materials and Devices, Appelstr. 11A, Hannover, N/A, D-30167, Germany, +49 511 762 4211, +49 511 762 4229
Malte Czernohorsky
Affiliation:
[email protected], University of Hannover, Institute of Electronic Materials and Devices, Appelstr. 11A, Hannover, N/A, D-30167, Germany
Eberhard Bugiel
Affiliation:
[email protected], University of Hannover, Institute of Electronic Materials and Devices, Appelstr. 11A, Hannover, N/A, D-30167, Germany
Dirk Kuehne
Affiliation:
[email protected], University of Hannover, Information Technology Laboratory, Schneiderberg 32, Hannover, N/A, D-30167, Germany
Andreas Fissel
Affiliation:
[email protected], University of Hannover, Information Technology Laboratory, Schneiderberg 32, Hannover, N/A, D-30167, Germany
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Abstract

We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3/Si interface structure. Optimized conditions (600 °C, pO2 = 5·10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA/cm2 at 1 V.

Keywords

dielectric propertiesmolecular beam epitaxy (MBE)oxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E10-04
Copyright
Copyright © Materials Research Society 2006

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