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The Development of Zero-temperature-gradient Zero-bias Thermally Stimulated Current (ZTGZBTSC) Spectroscopy Technique for the Detection of Defect States in Ultra-thin High-k Dielectric Films

Published online by Cambridge University Press:  01 February 2011

Wai Shing Lau ,
Kum Fai Wong ,
Taejoon Han  and
N. P. Sandler
Wai Shing Lau
Affiliation:
[email protected], Nanyang Technological University, School of EEE, NTU, School of EEE, Block S2.1, Nanyang Avenue, Singapore, Singapore, 639798, Singapore, (65) 97425167, (65) 6733318
Kum Fai Wong
Affiliation:
[email protected], Nanyang Technological University, School of EEE, NTU, Sch ool of EEE, Block S2.1, Nanyang Avenue, Singapore, Singapore, 639798, Singapore
Taejoon Han
Affiliation:
[email protected], Lam Research Corporation, Fremont, California, 94538, United States
N. P. Sandler
Affiliation:
[email protected], Lam Research Corporation, Fremont, California, 94538, United States
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Abstract

Previously, we have reported our application of the zero-bias thermally stimulated current (ZBTSC) spectroscopy technique to study defect states in high-dielectric constant insulator films like tantalum oxide (Ta2O5) with much less parasitic current which can be a serious limitation for the conventional thermally stimulated current (TSC) method. However, a parasitic current can still be observed for ZBTSC because of a small parasitic temperature gradient across the sample. The thermal design of the ZBTSC system can be improved, resulting in zero-temperature-gradient ZBTSC (ZTGZBTSC) which can be used to detect deeper traps than ZBTSC.

Keywords

insulatordefectsthermally stimulated current
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-18
Copyright
Copyright © Materials Research Society 2006

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References

[1] Lau, W.S., Tan, T.S., Sandler, N.P. and Page, B.S., Jpn. J. Appl. Phys. 34, 757 (1995).Google Scholar
[2] Zhu, W., Han, J.-P. and Ma, T.P., IEEE Trans. Electron Dev. 51, 98 (2004).Google Scholar
[3] Lau, W.S., Zhong, L., Lee, A., See, C.H., Han, T., Sandler, N.P. and Chong, T.C., Appl. Phys. Lett. 71, 500 (1997).Google Scholar
[4] Lau, W.S., Leong, L.L., Han, T. and Sandler, N.P., Appl. Phys. Lett. 83, 2835 (2003).Google Scholar
[5] Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H. and Goh, K.S., Jpn. J. Appl. Phys. Part 2, 30, L1843 (1991).Google Scholar
[6] McKinley, K.A. and Sandler, N.P., Thin Solid Films 290–291, 440 (1996).Google Scholar
[7] Lau, W. S., Khaw, K.K., Qian, P.W., Sandler, N.P. and Chu, P.K., Jpn. J. Appl. Phys. 35, 2599 (1996).Google Scholar
[8] Lau, W. S., Qian, P.W., Sandler, N.P., McKinley, K. A. and Chu, P.K., Jpn. J. Appl. Phys. 36, 661 (1997).Google Scholar
[9] van, A.W. Herwaarden, Sensors and Actuators 6, 245 (1984).Google Scholar
[10] Lau, W.S., US Patent 6,909,273, issued on June 21st, 2005.Google Scholar
[11] Lau, W.S. and Han, T., Appl. Phys. Lett. 86, 152107 (2005).Google Scholar
[12] Ullman, F.G., J. Phys. Chem. Solids. 28, 279 (1967).Google Scholar
[13] Lau, W. S., Zhong, L., Han, T. and Sandler, N.P., MRS Symp. Proc. 864, E3.2.1 (2005).Google Scholar